H11A617D

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES PACKAGE H11A617 SERIES H11A817 SERIES H11AA814 SCHEMATIC 1 4 COLLECTOR 4 2 3 EMITTER 1 DESCRIPTION The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. H11A617 & H11A817 SCHEMATIC ANODE 1 4 COLLECTOR FEATURES Compact 4-pin package Current transfer ratio in selected groups: H11AA814: 20-300% H11A817: H11AA814A: 50-150% H11A817A: H11A617A: 40%-80% H11A817B: H11A617B: 63%-125% H11A817C: H11A617C: 100%-200% H11A817D: H11A617D: 160%-320% Minimum BVCEO of 70V guaranteed 50-600% 80-160% 130-260% 200-400% 300-600% CATHODE 2 3 EMITTER APPLICATIONS H11AA814 Series AC line monitor Unknown polarity DC sensor Telephone line interface H11A617 and H11A817 Series Power supply regulators Digital logic inputs Microprocessor inputs © 2003 Fairchild Semiconductor Corporation Page 1 of 9 4/24/03 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation (-55°C to 50 °C) EMITTER Continuous Forward Current Reverse Voltage Forward Current - Peak (1 µs pulse, 300 pps) LED Power Dissipation (25°C ambient) Derate above 25°C DETE...