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H11A817 Dataheets PDF



Part Number H11A817
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
Datasheet H11A817 DatasheetH11A817 Datasheet (PDF)

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES PACKAGE H11A617 SERIES H11A817 SERIES H11AA814 SCHEMATIC 1 4 COLLECTOR 4 2 3 EMITTER 1 DESCRIPTION The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. H11A6.

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4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES PACKAGE H11A617 SERIES H11A817 SERIES H11AA814 SCHEMATIC 1 4 COLLECTOR 4 2 3 EMITTER 1 DESCRIPTION The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. H11A617 & H11A817 SCHEMATIC ANODE 1 4 COLLECTOR FEATURES • Compact 4-pin package • Current transfer ratio in selected groups: H11AA814: 20-300% H11A817: H11AA814A: 50-150% H11A817A: H11A617A: 40%-80% H11A817B: H11A617B: 63%-125% H11A817C: H11A617C: 100%-200% H11A817D: H11A617D: 160%-320% • Minimum BVCEO of 70V guaranteed 50-600% 80-160% 130-260% 200-400% 300-600% CATHODE 2 3 EMITTER APPLICATIONS H11AA814 Series • AC line monitor • Unknown polarity DC sensor • Telephone line interface H11A617 and H11A817 Series • Power supply regulators • Digital logic inputs • Microprocessor inputs © 2003 Fairchild Semiconductor Corporation Page 1 of 9 4/24/03 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation (-55°C to 50 °C) EMITTER Continuous Forward Current Reverse Voltage Forward Current - Peak (1 µs pulse, 300 pps) LED Power Dissipation (25°C ambient) Derate above 25°C DETECTOR Collector-Emitter Voltage Emitter-Collector Voltage Continuous Collector Current Detector Power Dissipation (25°C ambient) Derate above 25°C VCEO VECO IC PD All H11AA814/A H11A617A/B/C/D H11A817/A/B/C/D All All 70 6 7 6 50 150 2.0 V V mA mW mW/°C IF VR IF(pk) PD All H11A617A/B/C/D H11A817/A/B/C/D All All 50 6 5 1.0 100 1.33 mA V A mW mW/°C TSTG TOPR TSOL PD All All All All -55 to +150 -55 to +100 260 for 10 sec 200 °C °C °C mW H11A617 SERIES Symbol Device H11A817 SERIES Value Units ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter EMITTER Input Forward Voltage Reverse Leakage Current DETECTOR Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Test Conditions Symbol (IF = 60 mA) (IF = 20 mA) (IF = ±20 mA) (VR = 6.0 V) (VR = 5.0 V) (IC = 1.0 mA, IF = 0) (IE = 100 µA, IF = 0) IR VF Device H11A617A/B/C/D H11A817/A/B/C/D H11AA814/A H11A617A/B/C/D H11A817/A/B/C/D Min Typ* 1.35 1.2 1.2 .001 Max 1.65 1.5 1.5 10 µA V Unit BVCEO BVECO ALL H11AA814/A H11A617A/B/C/D H11A817/A/B/C/D H11AA814/A, H11A817/A/B/C/D, H11A617C/D H11A617A/B ALL 70 6 7 6 100 V 10 V Collector-Emitter Dark Current Collector-Emitter Capacitance *Typical values at TA = 25°C. (VCE = 10V, IF = 0) (VCE = 0 V, f = 1 MHz) ICEO CCE 1 8 100 50 nA pF © 2003 Fairchild Semiconductor Corporation Page 2 of 9 4/24/03 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A617 SERIES H11A817 SERIES TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.) DC Characteristic Test Conditions (IF = ±1 mA, VCE = 5 V) (note 1) (IF = ±1 mA, VCE = 5 V) (note 1) Symbol Device H11AA814 H11AA814A H11A617A (IF = 10 mA, VCE = 5 V) (note 1) H11A617B H11A617C H11A617D Current Transfer Ratio (IF = 5 mA, VCE = 5 V) (note 1) H11A817 CTR H11A817A H11A817B H11A817C H11A817D H11A617A (IF = 1 mA, VCE = 5 V) (note 1) H11A617B H11A617C H11A617D Collector-Emitter Saturation Voltage AC Characteristic Rise Time Fall Time (IC = 2 mA, VCE = 2 V, RL = 100V) (note 2) (IC = 2 mA, VCE = 2 V, RL = 100V) (note 2) tr tf ALL ALL 2.4 2.4 18 18 µs µs (IC = 1 mA, IF = ±20 mA) (IC = 2.5 mA, IF = 10 mA) (IC = 1 mA, IF = 20 mA) H11AA814/A VCE (SAT) H11A617A/B/C/D H11A817/A/B/C/D Min 20 50 40 63 100 160 50 80 130 200 300 13 22 34 56 0.2 0.4 0.2 V Typ* Max 300 150 80 125 200 320 600 160 260 400 600 Unit % % % % % % % % % % % % % % % ISOLATION CHARACTERISTICS Characteristic Input-Output Isolation Voltage (note 3) Isolation Resistance Isolation Capacitance *Typical values at TA = 25°C. NOTES 1. Current Transfer Ratio (CTR) = IC/IF x 100%. 2. For test circuit setup and waveforms, refer to Figure 8. 3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common. Test Conditions f = 60Hz, t = 1 min (VI-O = 500 VDC) (VI-O = 0, f = 1 MHz) Symbol VISO RISO CISO Min 5300 1011 0.5 Typ* Max Units Vac(rms) Ω pf © 2003 Fairchild Semiconductor Corporation Page 3 of 9 4/24/03 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES CTR NORMALIZED @ IF = 5 mA, VCE = 5 V, TA = 25˚C H11A617 SERIES NORMALIZED CTR CTR NORMALIZED @ IF = 5 mA, VCE = 5 V, TA = 25˚C H11A817 SERIES Fig. 2 Normalized CTR vs. Ambient Temperature Fig. 1 Normalized CTR vs. Forward Current 1.4 1.2 IF = 10 mA 1.2 1 1 NORMALIZED CTR 0.8 IF = 5 mA 0.8 0.6 0.4 0.6 0.2 0 0 5 10 15 20 25 30 IF - FORWARD CURRENT (mA) 0.4 -50 -25 0 +25 +50 +75 +100 TA - AMBIENT TEMPERATURE (˚C) Fig. 3 Collector-Emitter Saturation Voltage vs. Ambient Temperature .14 IF =.


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