H11A817C

4–PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES PACKAGE DIMENSIONS DESCRIPTION The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. .380 (9.64) MAX .012 (.30) .007 (.20) .055 (1.40) .047 (1.20) 4 3 .270 (6.86) .248 (6.30) .327 (8.30) MAX .300 (7.62) MIN The H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. 1 2 .187 (4.75) .175 (4.45) FEATURES 0 to 15° s s .200 (5.10) MAX .158 (4.01) .144 (3.68) .020 (.51) MIN .154 (3.90) .120 (3.05) Compact 4-pin package Current transfer ratio in selected groups: H11AA814: 20-300% H11AA814A: 50-150% H11A817: H11A817A: H11A817B: H11A817C: H11A817D: 50-600% 80-160% 130-260% 200-400% 300-600% .022 (.56) .015 (.40) .100 (2.54) TYP APPLICATIONS 1 4 COLLECTOR ANODE 1 4 COLLECTOR 2 3 EMITTER CATHODE 2 3 EMITTER Equivalent Circuit (H11AA814) Equivalent Circuit (H11A817) H11AA814 Series s AC line monitor s Unknown polarity DC sensor s Telephone line interface H11A817 Series s Power supply regulators s Digital logic inputs s Microprocessor inputs s Industrial controls NOTE: ALL DIMENSIONS ARE IN INCHES (mm) PACKAGE CODE T ABSOLUTE MAXIMUM RATING TOTAL PACKAGE Storage temperature . . . . . . . . . . . . . . . . .-55° to 150° C Operating temperature . . . . . . . . . . . . . . . ...