H11A817C Datasheet

H11A817C 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransis.

Features

• Compact 4-pin package
• Current transfer ratio in selected groups: H11AA814: 20-300% H11A817: H11AA814A: 50-150% H11A817A: H11A617A: 40%-80% H11A817B: H11A617B: 63%-125% H11A817C: H11A617C: 100%-200% H11A817D: H11A617D: 160%-320%
• Minimum BVCEO of 70V guaranteed 50-600% 80-160% 130-260% 200-400% 300-600% CATHODE 2 3 EMITTER APPLICATIONS H11AA814 Series
• AC line monitor
• Unknown polarity DC sensor
• Telephone line interface H11A617 and H11A817 Series
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs © 2003 Fairchild Semiconductor Corporation Page 1 of 9 4/24/03.