Document
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11AA814 SERIES
PACKAGE
H11A617 SERIES
H11A817 SERIES
H11AA814 SCHEMATIC
1
4 COLLECTOR
4
2 3 EMITTER
1
DESCRIPTION
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
H11A617 & H11A817 SCHEMATIC
ANODE 1
4 COLLECTOR
FEATURES
• Compact 4-pin package • Current transfer ratio in selected groups: H11AA814: 20-300% H11A817: H11AA814A: 50-150% H11A817A: H11A617A: 40%-80% H11A817B: H11A617B: 63%-125% H11A817C: H11A617C: 100%-200% H11A817D: H11A617D: 160%-320% • Minimum BVCEO of 70V guaranteed 50-600% 80-160% 130-260% 200-400% 300-600%
CATHODE 2
3 EMITTER
APPLICATIONS
H11AA814 Series • AC line monitor • Unknown polarity DC sensor • Telephone line interface H11A617 and H11A817 Series • Power supply regulators • Digital logic inputs • Microprocessor inputs
© 2003 Fairchild Semiconductor Corporation
Page 1 of 9
4/24/03
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11AA814 SERIES
Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation (-55°C to 50 °C) EMITTER Continuous Forward Current Reverse Voltage Forward Current - Peak (1 µs pulse, 300 pps) LED Power Dissipation (25°C ambient) Derate above 25°C DETECTOR Collector-Emitter Voltage Emitter-Collector Voltage Continuous Collector Current Detector Power Dissipation (25°C ambient) Derate above 25°C VCEO VECO IC PD All H11AA814/A H11A617A/B/C/D H11A817/A/B/C/D All All 70 6 7 6 50 150 2.0 V V mA mW mW/°C IF VR IF(pk) PD All H11A617A/B/C/D H11A817/A/B/C/D All All 50 6 5 1.0 100 1.33 mA V A mW mW/°C TSTG TOPR TSOL PD All All All All -55 to +150 -55 to +100 260 for 10 sec 200 °C °C °C mW
H11A617 SERIES
Symbol Device
H11A817 SERIES
Value Units
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter EMITTER Input Forward Voltage Reverse Leakage Current DETECTOR Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Test Conditions Symbol (IF = 60 mA) (IF = 20 mA) (IF = ±20 mA) (VR = 6.0 V) (VR = 5.0 V) (IC = 1.0 mA, IF = 0) (IE = 100 µA, IF = 0) IR VF Device H11A617A/B/C/D H11A817/A/B/C/D H11AA814/A H11A617A/B/C/D H11A817/A/B/C/D Min Typ* 1.35 1.2 1.2 .001 Max 1.65 1.5 1.5 10 µA V Unit
BVCEO BVECO
ALL H11AA814/A H11A617A/B/C/D H11A817/A/B/C/D H11AA814/A, H11A817/A/B/C/D, H11A617C/D H11A617A/B ALL
70 6 7 6
100
V
10
V
Collector-Emitter Dark Current Collector-Emitter Capacitance *Typical values at TA = 25°C.
(VCE = 10V, IF = 0) (VCE = 0 V, f = 1 MHz)
ICEO CCE
1 8
100 50
nA pF
© 2003 Fairchild Semiconductor Corporation
Page 2 of 9
4/24/03
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
TRANSFER CHARACTERISTICS (.
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