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H11AA1 Dataheets PDF



Part Number H11AA1
Manufacturers Motorola Inc
Logo Motorola  Inc
Description 6-Pin DIP Optoisolators AC Input/Transistor Output
Datasheet H11AA1 DatasheetH11AA1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by H11AA1/D GlobalOptoisolator™ 6-Pin DIP Optoisolators AC Input/Transistor Output The H11AA1, H11AA2, H11AA3, H11AA4 devices consist of two gallium– arsenide infrared emitting diodes connected in inverse parallel, optically coupled to a monolithic silicon phototransistor detector. • Built–In Protection for Reverse Polarity • Guaranteed CTR Minimum Values as High as 100% • Guaranteed Minimum/Maximum Symmetry Limits • To order devices .

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by H11AA1/D GlobalOptoisolator™ 6-Pin DIP Optoisolators AC Input/Transistor Output The H11AA1, H11AA2, H11AA3, H11AA4 devices consist of two gallium– arsenide infrared emitting diodes connected in inverse parallel, optically coupled to a monolithic silicon phototransistor detector. • Built–In Protection for Reverse Polarity • Guaranteed CTR Minimum Values as High as 100% • Guaranteed Minimum/Maximum Symmetry Limits • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Applications • Detecting or Monitoring ac Signals • AC Line/Digital Logic Isolation • Programmable Controllers • Interfacing and coupling systems of different potentials and impedances • AC/DC — Input Modules MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Forward Current — Continuous (RMS) LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT TRANSISTOR Collector–Emitter Voltage Emitter–Base Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LEDs Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16″ from case) VISO PD TA Tstg TL 7500 250 2.94 – 55 to +100 – 55 to +150 260 Vac(pk) mW mW/°C °C °C °C VCEO VEBO VCBO IC PD 30 5 70 150 150 1.76 Volts Volts Volts mA mW mW/°C IF PD 60 120 1.41 mA mW mW/°C 1 2 3 Symbol Value Unit H11AA1* H11AA2 H11AA3 H11AA4* [CTR = 20% Min] [CTR = 10% Min] [CTR = 50% Min] [CTR = 100% Min] *Motorola Preferred Devices STYLE 8 PLASTIC 6 1 STANDARD THRU HOLE CASE 730A–04 SCHEMATIC 6 5 4 NC INPUT LED INPUT LED NO CONNECTION EMITTER COLLECTOR BASE PIN 1. 2. 3. 4. 5. 6. 1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Preferred devices are Motorola recommended choices for future use and best overall value. GlobalOptoisolator is a trademark of Motorola, Inc. REV 1 Optoelectronics Device Data ©Motorola Motorola, Inc. 1995 1 H11AA1 H11AA2 H11AA3 H11AA4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Characteristic INPUT LED Forward Voltage (IF = 10 mA, either direction) H11AA1,3,4 H11AA2 All devices All devices VF — — — — — 1.15 1.15 1.3 1.05 20 1.5 1.8 — — — Volts Symbol Min Typ(1) Max Unit TA = –55°C TA = 100°C Capacitance (V = 0 V, f = 1 MHz) OUTPUT TRANSISTOR Collector–Emitter Dark Current (VCE = 10 V) H11AA1,3,4 H11AA2 All devices CJ pF ICEO TA = 100°C — — — — 30 70 5 — — — — 1 1 1 0.2 45 100 7.8 500 1.7 20 10 100 200 — — — — — — — — — nA nA µA nA Volts Volts Volts — pF pF pF Collector–Base Dark Current (VCB = 10 V) Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Base Breakdown Voltage (IC = 100 µA) Emitter–Collector Breakdown Voltage (IE = 100 µA) DC Current Gain (IC = 2 mA, VCE = 5 V) (Typical Value) Collector–Emitter Capacitance (f = 1 MHz, VCE = 0 V) Collector–Base Capacitance (f = 1 MHz, VCB = 0 V) Emitter–Base Capacitance (f = 1 MHz, VEB = 0 V) COUPLED Output Collector Current (IF = 10 mA, VCE = 10 V) ICBO V(BR)CEO V(BR)CBO V(BR)ECO hFE CCE CCB CEB IC (CTR)(2) " Output Collector Current Symmetry(3) I at I ǒ H11AA1 H11AA2 H11AA3 H11AA4 H11AA1,3,4 + ) 10 mA, VCE + 10 V F C I at I + –10 mA, V + 10 V F C CE Collector–Emitter Saturation Voltage (IC = 0.5 mA, IF = Isolation Voltage (f = 60 Hz, t = 1 sec)(4) Isolation Resistance (V = 500 V)(4) Isolation Capacitance (V = 0 V, f = 1 MHz)(4) 1. 2. 3. 4. "10 mA) Ǔ 2 (20) 1 (10) 5 (50) 10 (100) 0.33 5 (50) 2 (20) 10 (100) 15 (150) — — — — — 3 mA (%) — — VCE(sat) VISO RISO CISO — 7500 1011 — 0.1 — — 0.2 0.4 — — — Volts Vac(pk) Ω pF Always design to the specified minimum/maximum electrical limits (where applicable). Current Transfer Ratio (CTR) = IC/IF x 100%. This specification guarantees that the higher of the two IC readings will be no more than 3 times the lower at IF = 10 mA. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2 Motorola Optoelectronics Device Data H11AA1 H11AA2 H11AA3 H11AA4 TYPICAL CHARACTERISTICS 2.4 Vin, INPUT VOLTAGE (VOLTS) 1.6 0.8 0 –0.8 –1.6 –2.4 –1000 PULSE ONLY PULSE OR DC INPUT CURRENT WAVEFORM MAXIMUM PEAK OUTPUT CURRENT (1) MINIMUM PEAK OUTPUT CURRENT (1) –600 –200 0 200 600 iF, INSTANANEOUS INPUT CURRENT (mA) 1000 Figure 1. Input Voltage versus Input Current I C , OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 7 5 2 1 0.7 0.5 0.2 0.1 Figure 2. Output Characteristics 28 IC , COLLECTOR CURRENT (mA) 24 20 16 5 mA 12 8 4 0 0 1 2 3 4 5 6 7 8 9 VC.


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