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H11AA4 Dataheets PDF



Part Number H11AA4
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS
Datasheet H11AA4 DatasheetH11AA4 Datasheet (PDF)

AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS H11AA1 DESCRIPTION The H11AAX series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. H11AA3 H11AA2 H11AA4 6 1 6 SCHEMATIC FEATURES • • • • Bi-polar emitter input Built-in reverse polarity input protection Underwriters Laboratory (UL) recognized  File #E90700 VDE approved  File #E94766 (ordering option ‘300’) 1 1 6 BASE 6 2 5 COLL APPLICATIONS • AC line monit.

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AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS H11AA1 DESCRIPTION The H11AAX series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. H11AA3 H11AA2 H11AA4 6 1 6 SCHEMATIC FEATURES • • • • Bi-polar emitter input Built-in reverse polarity input protection Underwriters Laboratory (UL) recognized  File #E90700 VDE approved  File #E94766 (ordering option ‘300’) 1 1 6 BASE 6 2 5 COLL APPLICATIONS • AC line monitor • Unknown polarity DC sensor • Telephone line interface 1 3 4 EMITTER Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation Derate Linearly From 25°C EMITTER Continuous Forward Current Forward Current - Peak (1 µs pulse, 300 pps) LED Power Dissipation Derate Linearly From 25°C DETECTOR Detector Power Dissipation Derate above 25°C Symbol TSTG TOPR TSOL PD IF IF(pk) PD Device All All All All All All All Value -55 to +150 -55 to +100 260 for 10 sec 350 4.6 100 ±1.0 200 2.6 300 4.0 Units °C °C °C mW mW/°C mA A mW mW/°C mW mW/°C PD All  2001 Fairchild Semiconductor Corporation DS300212 12/12/01 1 OF 7 www.fairchildsemi.com AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS H11AA1 H11AA3 H11AA2 H11AA4 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter EMITTER Input Forward Voltage Capacitance DETECTOR Breakdown Voltage Collector to Emitter Collector to Base Emitter to Base Emitter to Collector Leakage Current Collector to Emitter Capacitance Collector to Emitter Collector to Base Emitter to Base VCE = 0, f = 1 MHz VCE = 0, f = 1 MHz VCE = 0, f = 1 MHz CCE CCB CEB All All All 10 80 15 pF pF pF VCE = 10 V, IF = 0 ICEO H11AA1,3,4 H11AA2 50 200 nA IC = 1.0 mA, IF = 0 IC = 100 µA, IF = 0 IE = 100 µA, IF = 0 IE = 100 µA, IF = 0 BVCEO BVCBO BVEBO BVECO All All All All 30 70 5 7 V V V V IF = ±10 mA VF = 0 V, f = 1.0 MHz VF CJ All All 1.2 80 1.5 V pF Test Conditions Symbol Device Min Typ Max Unit TRANSFER CHARACTERISTICS Characteristics Current Transfer Ratio, Collector to Emitter Current Transfer Ratio, Symmetry Saturation Voltage Collector to Emitter (TA = 25°C Unless otherwise specified.) Symbol Device H11AA4 H11AA3 H11AA1 H11AA2 All VCE(SAT) All Min 100 50 20 10 .33 3.0 .40 % V % Typ Max Units Test Conditions IF = ±10 mA, VCE = 10 V CTRCE IF = ±10 mA, VCE = 10 V (Figure.8) IF = ±10 mA, ICE = 0.5 mA ISOLATION CHARACTERISTICS Characteristic Package Capacitance input/output Isolation Voltage Isolation Resistance Test Conditions VI-O = 0, f = 1 MHz f = 60 Hz, t = 1 min. VI-O = 500 VDC Symbol CI-O VISO RISO 5300 1011 Min Typ 0.7 Max Units pF V Ω www.fairchildsemi.com 2 OF 7 12/12/01 DS300212 AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS H11AA1 100 80 1.2 60 40 20 0 -20 -40 -60 -80 -100 -2.0 0.2 1.0 H11AA3 H11AA2 1.4 VCE = 5.0V TA = 25˚C H11AA4 Fig. 1 Input Voltage vs. Input Current Fig. 2 Normalized CTR vs. Forward Current Normali.


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