PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1 DESCRIPTION
The H11AG series consists of a Gallium-AluminumArsenide IRED emitting d...
PHOTO
TRANSISTOR OPTOCOUPLERS
H11AG1 DESCRIPTION
The H11AG series consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon photo
transistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications.
H11AG2
H11AG3
6 1
6
SCHEMATIC
FEATURES
High efficiency low degradation liquid epitaxial IRED Logic level compatible, input and output currents, with CMOS and LS/TTL High DC current transfer ratio at low input currents Underwriters Laboratory (UL) recognized File #E90700
1
ANODE 1 6 BASE
6 1
CATHODE 2
5 COL
APPLICATIONS
CMOS driven solid state reliability Telephone ring detector Digital logic isolation
N/C 3
4 EMITTER
ABSOLUTE MAXIMUM RATINGS
Parameters TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ 25°C (LED plus detector) Derate Linearly From 25°C EMITTER Continuous Forward Current Reverse Voltage Forward Current - Peak (1 µs pulse, 300 pps) LED Power Dissipation 25°C Ambient Derate Linearly From 25°C DETECTOR Detector Power Dissipation @ 25°C Derate Linearly from 25°C Continuous Collector Current PD All All 150 2.0 50 mW mW/°C mA Symbol TSTG TOPR TSOL PD IF VR IF(pk) PD Device All All All All All All All All Value -55 to +150 -55 to +100 260...