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H11AV2A-M Dataheets PDF



Part Number H11AV2A-M
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PHOTOTRANSISTOR OPTOCOUPLERS
Datasheet H11AV2A-M DatasheetH11AV2A-M Datasheet (PDF)

PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M SCHEMATIC PACKAGE OUTLINE 1 6 2 5 6 6 1 H11AV1S-M, H11AV2S-M 1 H11AV1-M, H11AV2-M PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 3 NC 4 6 1 H11AV1A-M, H11AV2A-M DESCRIPTION The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package. FEATURES • H11AV1 and H11AV2 feature 0.3" input-output lead sp.

  H11AV2A-M   H11AV2A-M



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PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M SCHEMATIC PACKAGE OUTLINE 1 6 2 5 6 6 1 H11AV1S-M, H11AV2S-M 1 H11AV1-M, H11AV2-M PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 3 NC 4 6 1 H11AV1A-M, H11AV2A-M DESCRIPTION The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package. FEATURES • H11AV1 and H11AV2 feature 0.3" input-output lead spacing • H11AV1A and H11AV2A feature 0.4" input-output lead spacing • UL recognized (File #E90700, Vol. 2) • VDE recognized (File #102497) - Add option V (e.g., H11AV1AV-M) APPLICATIONS • Power supply regulators • Digital logic inputs • Microprocessor inputs © 2003 Fairchild Semiconductor Corporation Page 1 of 10 6/30/03 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter TOTAL DEVICE Storage Temperature Operating Temperature Wave solder temperature (see page 9 for reflow solder profiles) Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER DC/Average Forward Input Current Reverse Input Voltage LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Detector Power Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VECO PD 70 70 7 150 1.76 V V V mW mW/°C IF VR PD 60 6 120 1.41 mA V mW mW/°C TSTG TOPR TSOL PD -40 to +150 -40 to +100 260 for 10 sec 250 2.94 °C °C °C mW mW/°C Symbol Value Units © 2003 Fairchild Semiconductor Corporation Page 2 of 10 6/30/03 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter EMITTER Input Forward Voltage (IF = 10 mA) TA = 25°C TA = -55°C TA = 100°C Reverse Leakage Current DETECTOR Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current Collector-Base Dark Current Capacitance (IC = 1.0 mA, IF = 0) (IC = 100 µA, IF = 0) (IE = 100 µA, IF = 0) (VCE = 10 V, IF = 0) (VCB = 10 V) (VCE = 0 V, f = 1 MHz) BVCEO BVCBO BVECO ICEO ICBO CCE 70 70 7 100 120 10 1 0.5 8 50 V V V nA nA pF (VR = 6.0 V) IR VF 0.8 0.9 0.7 1.18 1.28 1.05 1.5 1.7 1.4 10 µA V Test Conditions Symbol Min Typ* Max Unit ISOLATION CHARACTERISTICS Characteristic Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance Note * Typical values at TA = 25°C Test Conditions Symbol (f = 60 Hz, t = 1 sec) (VI-O = 500 VDC) (VI-O = 0 V, f = 1 MHz) VISO RISO CISO Min 7500 1011 0.2 2 Typ* Max Units Vac(pk) Ω pF © 2003 Fairchild Semiconductor Corporation Page 3 of 10 6/30/03 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.) DC Characteristic Current Transfer Ratio, Collector to E.


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