H11B1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by H11B1/D GlobalOptoisolator™ H11B1 * [CTR = 500% Min] 6-Pin DIP Optoisolators Darlington Output (Low Input Current) The H11B1 and H11B3 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applications requiring high output current (IC) at low LED input currents (IF). High Sensitivity to Low Input Drive Current (IF = 1 mA) To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Applications Appliances, Measuring Instruments I/O Interfaces for Computers Programmable Controllers Interfacing and coupling systems of different potentials and impedances Solid State Relays Portable Electronics MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT DETECTOR Collector–Emitter Voltage Emitter–Base Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(...