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H11B815

QT Optoelectronics

4-PIN PHOTODARLINGTON OPTOCOUPLERS


Description
4-PIN PHOTODARLINGTON OPTOCOUPLERS H11B815 DESCRIPTION The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package. 4 FEATURES Compact 4-pin package Current Transfer Ratio: 600% minimum (at IF = 1 mA) High isolation voltage between input and output (5300 VRMS) UL re...



QT Optoelectronics

H11B815

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