H11B815

4-PIN PHOTODARLINGTON OPTOCOUPLERS H11B815 DESCRIPTION The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package. 4 FEATURES Compact 4-pin package Current Transfer Ratio: 600% minimum (at IF = 1 mA) High isolation voltage between input and output (5300 VRMS) UL recognized (File # E90700) 4 1 4 1 APPLICATIONS Power Supply Monitors Relay Contact Monitor Telephone/Telegraph Line Receiver Twisted Pair Line Receiver Digital Logic/Digital Logic ANODE 1 4 COLLECTOR 1 CATHODE 2 3 EMITTER ABSOLUTE MAXIMUM RATINGS Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C EMITTER DC/Average Forward Input Current Reverse Input Voltage Forward Current - Peak (1µs pulse, 300pps) LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage Emitter-Collector Voltage Continuous Collector Current Detector Power Dissipation @ TA = 25°C Derate above 25°C (No derating required up to 85°C) Symbol TSTG TOPR TSOL PD IF VR IF(pk) PD VCEO VECO IC PD Value -55 to +150 -55 to +100 260 for 10 sec 250 80 6 1 140 1.33 35 6 200 200 2.0 Units °C °C °C mW mA V A mW mW/°C V V mA mW mW/°C 1/25/00 200029A 4-PIN PHOTODARLINGTON OPTOCOUPLERS H11B815 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter EMITTER Input Forward Voltage Reverse...