H11B815

4-PIN PHOTODARLINGTON OPTOCOUPLER H11B815 PACKAGE SCHEMATIC ANODE 1 4 COLLECTOR 4 4 CATHODE 2 3 EMITTER 1 1 4 1 DESCRIPTION The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package. FEATURES Compact 4-pin package Current Transfer Ratio: 600% minimum (at IF = 1 mA) High isolation voltage between input and output (5300 VRMS) UL recognized (File # E90700) APPLICATIONS Power Supply Monitors Relay Contact Monitor Telephone/Telegraph Line Receiver Twisted Pair Line Receiver Digital Logic/Digital Logic © 2002 Fairchild Semiconductor Corporation Page 1 of 9 3/26/03 4-PIN PHOTODARLINGTON OPTOCOUPLER H11B815 ABSOLUTE MAXIMUM RATINGS (No derating required up to 85°C) Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C EMITTER DC/Average Forward Input Current Reverse Input Voltage Forward Current - Peak (1µs pulse, 300pps) LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage Emitter-Collector Voltage Continuous Collector Current Detector Power Dissipation @ TA = 25°C Derate above 25°C VCEO VECO IC PD 35 6 200 200 2.0 V V mA mW mW/°C IF VR IF(pk) PD 80 6 1 140 1.33 mA V A mW mW/°C TSTG TOPR TSOL PD -55 to +150 -55 to +100 260 for 10 sec 250 °C °C °C mW Symbol Value Units ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CH...