H11D1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by H11D1/D GlobalOptoisolator™ H11D1 * H11D2 [CTR = 20% Min] *Motorola Preferred Device 6-Pin DIP Optoisolators High Voltage Transistor Output (300 Volts) The H11D1 and H11D2 consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransistor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and solid state relays. To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Applications Copy Machines Interfacing and coupling systems of different potentials and impedances Monitor and Detection Circuits Solid State Relays MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Forward Current — Continuous Forward Current — Peak Pulse Width = 1 µs, 330 pps LED Power Dissipation @ TA = 25°C Derate above 25°C OUTPUT TRANSISTOR Collector–Emitter Voltage Emitter–Collector Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C Derate above 25°C TOTAL DEVICE Total Device Power Dissipation @ TA = 25°C Derate above 25°C Operating Temperature Range(3) Storage Temperature Range(3) Soldering Temperature (10 s) Isolation Surge Voltage Peak ac Voltage, 60 Hz, 1 Second Duration(1) 1. 1. 2. 1. 3. PD TJ Tstg TL VISO 250 2.94 – 55 to +100 – 55 to ...