Document
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
PACKAGE SCHEMATIC
ANODE 1
6
OUTPUT TERM.
6 1
6
CATHODE 2 5
1
3 4 OUTPUT TERM.
6 1
DESCRIPTION
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
FEATURES
As a remote variable resistor • ≤ 100Ω to ≥ 300 MΩ • ≥ 99.9% linearity • ≤ 15 pF shunt capacitance • ≥ 100 GΩ I/O isolation resistance As an analog switch • Extremely low offset voltage • 60 Vpk-pk signal capability • No charge injection or latch-up • ton, toff ≤ 15 µS • UL recognized (File #E90700) • VDE recognized (File #E94766) – Ordering option ‘300’ (e.g. H11F1.300)
APPLICATIONS
As a variable resistor – • Isolated variable attenuator • Automatic gain control • Active filter fine tuning/band switching As an analog switch – • Isolated sample and hold circuit • Multiplexed, optically isolated A/D conversion
© 2002 Fairchild Semiconductor Corporation
Page 1 of 9
6/24/02
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature EMITTER Continuous Forward Current Reverse Voltage Forward Current - Peak (10 µs pulse, 1% duty cycle) LED Power Dissipation 25°C Ambient Derate Linearly From 25°C DETECTOR Detector Power Dissipation @ 25°C Derate linearly from 25°C Breakdown Voltage (either polarity) Continuous Detector Current (either polarity) PD BV4-6 I4-6 All H11F1, H11F2 H11F3 All 300 4.0 ±30 ±15 ±100 mW mW/°C V V mA IF VR IF(pk) PD All All All All 60 5 1 100 1.33 mA V A mW mW/°C TSTG TOPR TSOL All All All -55 to +150 -55 to +100 260 for 10 sec °C °C °C Symbol Device Value Units
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter EMITTER Input Forward Voltage Reverse Leakage Current Capacitance OUTPUT DETECTOR Breakdown Voltage Either Polarity Off-State Dark Current Off-State Resistance Capacitance I4-6 = 10µA, IF = 0 V4-6 = 15 V, IF = 0 V4-6 = 15 V, IF = 0, TA = 100°C V4-6 = 15 V, IF = 0 V4-6 = 15 V, IF = 0, f = 1MHz BV4-6 I4-6 R4-6 C4-6 H11F1, H11F2 H11F3 All All All All 300 15 30 15 50 50 V nA µA MΩ pF IF = 16 mA VR = 5 V V = 0 V, f = 1.0 MHz VF IR CJ All All All 50 1.3 1.75 10 V µA pF Test Conditions Symbol Device Min Typ* Max Unit
© 2002 Fairchild Semiconductor Corporation
Page 2 of 9
6/24/02
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
ISOLATION CHARACTERISTICS
Parameter Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance Test Conditions f = 60Hz, t = 1 min. VI-O = 500 VDC VI-O = 0, f = 1.0 MHz Symbol VISO RISO CISO Min 5300 1011 2 Typ* Max Units Vac (rms) Ω pF
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise s.