DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4075
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The 2SK4075 is N-channel M...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK4075
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
2SK4075-ZK-E1-AY
Pure Sn (Tin)
2SK4075-ZK-E2-AY
PACKING Tape
2500 p/reel
PACKAGE TO-252 (MP-3ZK)
typ. 0.27 g
FEATURES Low on-state resistance
RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A) Low Ciss: Ciss = 2900 pF TYP. Logic level drive type
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 40 V
Gate to Source Voltage (VDS = 0 V)
VGSS ±20 V
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
±60 ±180
A A
Total Power Dissipation (TC = 25°C) PT1 52 W
Total Power Dissipation (TA = 25°C) PT2 1.0 W
Channel Temperature
Tch 150 °C
Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2
Tstg –55 to +150 °C IAS 28 A EAS 78 mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C) 2.4 °C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
125
°C/W
(TO-252)
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