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GM71C17800C Dataheets PDF



Part Number GM71C17800C
Manufacturers Hynix Semiconductor
Logo Hynix Semiconductor
Description 1M-WORDS x 8-BIT CMOS DYNAMIC RAM
Datasheet GM71C17800C DatasheetGM71C17800C Datasheet (PDF)

GM71C17800C GM71CS17800CL 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM Description The GM71C(S)17800C/CL is the new generation dynamic RAM organized 2,097,152 x 8 bit. GM71C(S)17800C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C(S)17800C/CL offers Fast Page Mode as a high speed access mode. Multiplexed address inputs permit the GM71C(S)17800C/CL to be packaged in standard 400 mil 28pin plastic SOJ, and standard 400m.

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GM71C17800C GM71CS17800CL 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM Description The GM71C(S)17800C/CL is the new generation dynamic RAM organized 2,097,152 x 8 bit. GM71C(S)17800C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C(S)17800C/CL offers Fast Page Mode as a high speed access mode. Multiplexed address inputs permit the GM71C(S)17800C/CL to be packaged in standard 400 mil 28pin plastic SOJ, and standard 400mil 28 pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. Features * 2,097,152 Words x 8 Bit Organization * Fast Page Mode Capability * Single Power Supply (5V+/-10%) * Fast Access Time & Cycle Time (Unit: ns) tRAC tCAC GM71C(S)17800C/CL-5 GM71C(S)17800C/CL-6 GM71C(S)17800C/CL-7 50 60 70 13 15 18 tRC 90 110 130 tPC 35 40 45 * Low Power Active : 715/660/605mW (MAX) Standby : 11mW (CMOS level : MAX) 0.83mW (L-version : MAX) * RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability * All inputs and outputs TTL Compatible * 2048 Refresh Cycles/32ms * 2048 Refresh Cycles/128ms (L- version) * Battery Back Up Operation (L- version) * Self Refresh Operation (L-version) Pin Configuration 28 SOJ VSS 1 I/O0 2 I/O1 3 I/O2 4 I/O3 5 WE 6 RAS 7 NC 8 A10 9 A0 10 A1 11 A2 12 A3 13 VCC 14 28 VSS 27 I/O7 26 I/O6 25 I/O5 24 I/O4 23 CAS 22 OE 21 A9 20 A8 19 A7 18 A6 17 A5 16 A4 15 VSS 28 TSOP II VSS 1 I/O0 2 I/O1 3 I/O2 4 I/O3 5 WE 6 RAS 7 NC 8 28 VSS 27 I/O7 26 I/O6 25 I/O5 24 I/O4 23 CAS 22 OE 21 A9 20 A8 19 A7 18 A6 17 A5 16 A4 15 VSS A10 9 A0 10 A1 11 A2 12 A3 13 VCC 14 (Top View) Rev 0.1 / Apr’01 GM71C17800C GM71CS17800CL Pin Description Pin A0-A10 A0-A10 I/O0-I/O7 RAS CAS Function Address Inputs Refresh Address Inputs Data-In/Out Row Address Strobe Column Address Strobe Pin WE OE VCC VSS NC Function Read/Write Enable Output Enable Power (+5V) Ground No Connection Ordering Information Type No. GM71C(S)17800CJ/CLJ -5 GM71C(S)17800CJ/CLJ -6 GM71C(S)17800CJ/CLJ -7 GM71C(S)17800CT/CLT -5 GM71C(S)17800CT/CLT -6 GM71C(S)17800CT/CLT -7 Access Time 50ns 60ns 70ns 50ns 60ns 70ns Package 400 Mil 28 Pin Plastic SOJ 400 Mil 28 Pin Plastic TSOP II Absolute Maximum Ratings* Symbol TA TSTG VIN/OUT VCC IOUT PT Parameter Ambient Temperature under Bias Storage Temperature (Plastic) Voltage on any Pin Relative to VSS Voltage on VCC Relative to VSS Short Circuit Output Current Power Dissipation Rating 0 ~ +70 -55 ~ +125 -1.0 ~ +7.0V -1.0 ~ +7.0V 50 1.0 Unit C C V V mA W Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability. Recommended DC Operating Conditions (TA = 0 ~ +70C) Symbol VCC VIH VIL Parameter Supply Voltage Input High Voltage Input Low Voltage Min 4.5 2.4 -1.0 Typ 5.0 - Max 5.5 6.0 0.8 Unit V V V Note: All voltage referred to Vss. Rev 0.1 / Apr’01 GM71C17800C GM71CS17800CL DC Electrical Characteristics (VCC = 5V+/-10%, Vss = 0V, TA = 0 ~ 70C) Symbol VOH VOL ICC1 Parameter Output Level Output "H" Level Voltage (IOUT = -5mA) Output Level Output "L" Level Voltage (IOUT = 4.2mA) Operating Current Average Power Supply Operating Current (RAS, CAS Cycling: tRC = tRC min) Standby Current (TTL) Power Supply Standby Current (RAS, CAS = VIH, DOUT = High-Z) RAS Only Refresh Current Average Power Supply Current RAS Only Refresh Mode (tRC = tRC min) Fast Page Mode Current Average Power Supply Current Fast Page Mode (tPC = tPC min) Standby Current (CMOS) Power Supply Standby Current (RAS, CAS >= VCC - 0.2V, Dout = High-Z) CAS-before-RAS Refresh Current (tRC = tRC min) Battery Back Up Operating Current (Standby with CBR Refresh) (tRC=62.5us, tRAS<=0.3us, DOUT=High-Z) Standby Current RAS = VIH CAS = VIL DOUT = Enable Self-Refresh Mode Current (RAS, CAS<=0.2V, DOUT=High-Z) Input Leakage Current Any Input (0V<=VIN<= 6V) Output Leakage Current (DOUT is Disabled, 0V<=VOUT<= 6V) ICC(max) is specified at the output open condition. 2. Address can be changed once or less while RAS = VIL. 3. Address can be changed once or less while CAS = VIH. 4. CAS = L (<=0.2) while RAS = L (<=0.2). 5. L-version. 50ns 60ns 70ns ICC7 50ns 60ns 70ns 50ns 60ns 70ns 50ns 60ns 70ns Min 2.4 0 - Max VCC 0.4 110 100 90 2 110 100 90 100 90 85 1 150 110 100 90 500 Unit V V Note mA 1, 2 ICC2 mA ICC3 mA 2 ICC4 mA 1, 3 ICC5 mA uA 5 ICC6 mA uA 4,5 ICC8 - 5 mA 1 ICC9 IL(I) IL(O) -10 -10 300 10 10 uA uA uA 5 Note: 1. ICC depends on output load condition when the device is selected. Rev 0.1 / Apr’01 GM71C17800C GM71CS17800CL Capacitance (VCC = 5V+/-10%, TA = 25C) Symbol CI1 CI2 CI/O Parameter Input Capacitance (Address) Input Capacitance (Clocks) Output Capacitance (Data-In/Out) Min - Max 5 7 7 Unit pF pF pF Note 1 1 1, 2 Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method. 2. CAS = VIH to disable DOUT. AC Characteristics (VCC = 5V+/-10%, T.


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