GN1010

GaAs MMICs GN1010 GN1010 GaAs N-Channel MES IC For high-output high-gain amplification 0.65±0.15 Unit : mm 2.8 –0.3 +0.2 +0.2 1.5 –0.3 0.65±0.15 s Features 0.95 q q q General-use wide-band amplifier 2.9±0.2 0.5R 1.9±0.2 4 1 0.95 Low noise With bandwidth control pin 3 2 1.1 –0.1 s Absolute Maximum Ratings (Ta = 25˚C) Parameter Power supply voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGS ID IG PD Tch Tstg Rating 6 –4 45 3 200 150 – 55 to +150 Unit V V mA mA mW ˚C ˚C 1 : Source 2 : Drain 3:C 4 : Gate Mini Type Package (4-pin) s Equivalent Circuit 2 3 4 0 to 0.1 0.4±0.2 0.8 1 s Electrical Characteristics (Ta = 25˚C) Parameter Drain current Noise figure Power gain IdB compression output Symbol IDD * 1 NF * 2 PG * 2 PO * 2 VDS= 3V VDS= 3V, f= 0.5GHz VDS= 3V, f=1.8GHz VDS= 3V, f= 0.5GHz VDS= 3V, f=1.8GHz VDS= 3V, f= 0.5GHz VDS= 3V, f=1.8GHz 5 8 Condition Min 5 Typ 30 2 10 9 15 Max 45 3 Unit mA dB dB dBm *1 IDD rank classification Rank IDD(mA) P 5 to 20 Q 15 to 30 R 25 to 45 *2 NF, PG, PO test circuit VD C = 1000 pF Cc = 200 pF Cf = 27 pF Cc C C Cf Cc G S 0.16 –0.06 +0.2 +0.1 0.4 –0.05 +0.1 GaAs MMICs GN1010 PG, NF – f 12 Noise figure NF (dB) Forward transfer gain, Reverse transfer gain | S21 | , | S12 | (dB) | S21 |, | S12 | – f 30 Forward transfer gain, Reverse transfer gain | S11 | , | S22 | (dB) | S11 |, | S22 | – f 20 VDD=3V Ta=25˚C 10 VDD=3V Ta=25˚C 10 (dB) VDD=3V ...