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GN1G

EIC discrete Semiconductors

GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT

GN1A - GN13 PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * Glass passivated chip High current capability Hig...


EIC discrete Semiconductors

GN1G

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GN1A - GN13 PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT SMA (DO-214AC) 1.1 ± 0.3 5.0 ± 0.15 4.5 ± 0.15 1.2 ± 0.2 2.6 ± 0.15 2.1 ± 0.2 0.2 ± 0.07 MECHANICAL DATA : * * * * * * Case : SMA Molded plastic Epoxy : UL94V-O rate flame retardant Lead : Lead Formed for Surface Mount Polarity : Color band denotes cathode end Mounting position : Any Weight : 0.064 gram 2.0 ± 0.2 Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 75 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.0 Amp. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL GN1A GN1B GN1D GN1G GN1J GN1K GN1M GN13 800 560 800 1000 700 1000 1300 910 1300 UNIT VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 400 280 400 1.0 600 420 600 Volts Volts Volts Amp. IFSM VF IR IR(H) CJ TJ TSTG 30 1.0 5.0 50 8 - 65 to + 150 - 65 to + 150 Amps. Volts µA µA pF °C °C Typical Junction Capacitance (Note1) Junctio...




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