GP1200ESM33

GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 DS5308-2.1 February 2001 FEATURES s s s High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 3300V 3.4V 1200A 2400A APPLICATIONS s s s s High Reliability Inverters C1 Motor Controllers Traction Drives Resonant Converters Aux C External connection C2 C3 The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP1200ESM33 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. G Aux E E1 E2 External connection Fig. 1 Single switch circuit diagram E3 ORDERING INFORMATION Order As: GP1200ESM33 Note: When ordering, please use the whole part number. Outline type code: E (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This ...