GP1200FSS18

GP1200FSS18 GP1200FSS18 Single Switch IGBT Module Replaces February 2000 version, DS5260-2.0 DS5260-3.1 January 2001 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 1200A 2400A APPLICATIONS s s s s External connection C1 Aux C C2 High Power Inverters Motor Controllers Induction Heating Resonant Converters G The powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP1200FSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Aux E E1 E2 External connection Fig. 1 Single switch circuit diagram Aux C E1 C1 ORDERING INFORMATION Order As: GP1200FSS18 Note: When ordering, please use the whole part number. Aux E G E2 C2 Outline type code: F (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com GP1200FSS18 ABS...