GP1201FSS18

GP1201FSS18 GP1201FSS18 Single Switch Low VCE(SAT) IGBT Module DS5411-1.1 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 1200A 2400A External connection APPLICATIONS s s s s C1 Aux C C2 High Reliability Inverters Motor Controllers Traction Drives Resonant Converters G Aux E E1 E2 The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP1201FSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. External connection Fig. 1 Single switch circuit diagram Aux C Aux E E1 C1 G ORDERING INFORMATION Order As: GP1201FSS18 Note: When ordering, please use the whole part number. E2 C2 Outline type code: F (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device i...