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GP1600FSM12

Dynex Semiconductor

Single Switch IGBT Module Advance Information

GP1600FSM12 GP1600FSM12 Single Switch IGBT Module Advance Information DS5451-1.2 October 2001 FEATURES s s s s KEY PA...


Dynex Semiconductor

GP1600FSM12

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GP1600FSM12 GP1600FSM12 Single Switch IGBT Module Advance Information DS5451-1.2 October 2001 FEATURES s s s s KEY PARAMETERS VCES VCE(sat) IC IC(PK) (typ) 1200V 2.7V (max) 1600A (max) 3200A High Thermal Cycling Capability 1600A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates APPLICATIONS s s s s External connection C1 Aux C C2 High Reliability Inverters Motor Controllers Traction Drives Resonant Converters G The Powerline range of high power modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP1600FSM12 is a singlel switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Aux E E1 E2 External connection Fig.1 Single switch circuit diagram Aux C Aux E E1 C1 ORDERING INFORMATION Order As: GP1600FSM12 Note: When ordering, please use the complete part number. G E2 C2 Outline type code: F (See package details for further information) Fig. 2 Electrical connections - (not to scale) C...




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