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GP200MLS12 Dataheets PDF



Part Number GP200MLS12
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description IGBT Chopper Module Preliminary Information
Datasheet GP200MLS12 DatasheetGP200MLS12 Datasheet (PDF)

GP200MLS12 GP200MLS12 IGBT Chopper Module Preliminary Information DS5421-1.5 April 2001 FEATURES s s s s Internally Configured With Lower Arm Controlled Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 200A 400A APPLICATIONS s s s s s High Power Choppers Motor Controllers Induction Heating Resonant Converters Power Supplies 11(C2) 1(A1C2) 2(E2) 6(G2) 7(E2) 3(K1) The Powerline range.

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GP200MLS12 GP200MLS12 IGBT Chopper Module Preliminary Information DS5421-1.5 April 2001 FEATURES s s s s Internally Configured With Lower Arm Controlled Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 200A 400A APPLICATIONS s s s s s High Power Choppers Motor Controllers Induction Heating Resonant Converters Power Supplies 11(C2) 1(A1C2) 2(E2) 6(G2) 7(E2) 3(K1) The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP200MLS12 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the lower arm of the bridge controlled. The module incoporates high current rated freewheel diodes. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. 11 10 8 9 Fig. 1 Chopper circuit diagram 1 2 3 6 7 5 4 ORDERING INFORMATION Order As: GP200MLS12 Note: When ordering, please use the whole part number. Outline type code: M (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com GP200MLS12 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Collector current Peak collector current Max. transistor power dissipation Isolation voltage DC, Tcase = 72˚C 1ms, Tcase = 72˚C Tcase = 25˚C, Tj = 150˚C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1200 ±20 200 400 1490 2500 Units V V A A W V THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - antiparallel diode Thermal resistance - freewheel diode Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M6 –40 150 125 125 5 5 ˚C ˚C ˚C Nm Nm Continuous dissipation 160 80 15 ˚C/kW ˚C/kW ˚C/kW Min. Max. 84 Units ˚C/kW 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MLS12 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125˚C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = ±20V, VCE = 0V IC = 10mA, VGE = VCE VGE = 15V, IC = 200A VGE = 15V, IC = 200A, , Tcase = 125˚C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage - antiparallel diode DC tp = 1ms IF = 200A IF = 200A, Tcase = 125˚C Diode forward voltage - freewheel diode IF = 200A IF = 200A, Tcase = 125˚C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4.5 Typ. 2.7 3.2 2.2 2.3 1.7 1.7 25 30 Max. 1 12 ±1 6.5 3.5 4.0 200 400 2.4 2.5 2.1 2.2 Units mA mA µA V V V A A V V V V nF nH Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 www.dynexsemi.com GP200MLS12 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge freewheel diode IF = 200A, VR = 50% VCES, dIF/dt = 2500A/µs Test Conditions IC = 200A VGE = ±15V VCE = 600V RG(ON) = RG(OFF) = 4.7Ω L ~ 100nH Min. Typ. 500 150 25 400 80 20 20 Max. 700 200 35 550 110 30 30 Units ns ns mJ ns ns mJ µC Tcase = 125˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge freewheel diode IF = 200A, VR = 50% VCES, dIF/dt = 2000A/µs Test Conditions IC = 200A VGE = ±15V VCE = 600V RG(ON) = RG(OFF) = 4.7Ω L ~ 100nH Min. Typ. 600 200 40 500 110 40 55 Max. 800 250 50 650 150 55 70 Units ns ns mJ.


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