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GP250MHB06S

Dynex Semiconductor

Half Bridge IGBT Module

GP250MHB06S GP250MHB06S Half Bridge IGBT Module Replaces January 2000 version, DS4325 - 5.0 DS4325-6.0 October 2001 FE...


Dynex Semiconductor

GP250MHB06S

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Description
GP250MHB06S GP250MHB06S Half Bridge IGBT Module Replaces January 2000 version, DS4325 - 5.0 DS4325-6.0 October 2001 FEATURES s s s s KEY PARAMETERS VCES VCE(sat) IC25 IC75 IC(PK) (typ) 600V 2.2V (max) 350A (max) 250A (max) 700A n - Channel High Switching Speed Low Forward Voltage Drop Isolated Base APPLICATIONS s s PWM Motor Control UPS 11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1) The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP250MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Typical applications include dc motor drives, ac pwm drivesand ups systems. 9(C1) Fig. 1 Half bridge circuit diagram 11 10 1 2 3 6 7 5 4 ORDERING INFORMATION Order as: GP250MHB06S Note: When ordering, use complete part number. 8 9 Outline type code: M (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge....




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