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GP400DDS18 Dataheets PDF



Part Number GP400DDS18
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Dual Switch IGBT Module Preliminary Information
Datasheet GP400DDS18 DatasheetGP400DDS18 Datasheet (PDF)

GP400DDS18 GP400DDS18 Dual Switch IGBT Module Preliminary Information DS5359-2.0 January 2001 FEATURES s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 400A 1600A APPLICATIONS s s s s High Power Inverters Motor Controllers Induction Heating Resonant Converters 2(C2) 4(E2) 1(E1) 7(C1) 5(E1) 6(G1) 12(C2) 11(G2) 10(E2) 3(C1) The Powerline range of high power modules includes dua.

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GP400DDS18 GP400DDS18 Dual Switch IGBT Module Preliminary Information DS5359-2.0 January 2001 FEATURES s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 400A 1600A APPLICATIONS s s s s High Power Inverters Motor Controllers Induction Heating Resonant Converters 2(C2) 4(E2) 1(E1) 7(C1) 5(E1) 6(G1) 12(C2) 11(G2) 10(E2) 3(C1) The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP400DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Fig. 1 Dual switch circuit diagram 5 6 ORDERING INFORMATION Order As: GP400DDS18 Note: When ordering, please use the whole part number. 12 11 10 9 7 8 3 1 4 2 Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com GP400DDS18 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Isolation voltage Tcase = 65˚C 1ms, Tcase = 105˚C Tcase = 25˚C, Tj = 150˚C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1800 ±20 400 800 3000 4000 Units V V A A W V THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 –40 150 125 125 5 2 10 ˚C ˚C ˚C Nm Nm Nm 8 ˚C/kW 80 ˚C/kW Min. Max. 42 Units ˚C/kW 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400DDS18 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125˚C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = ±20V, VCE = 0V IC = 20mA, VGE = VCE VGE = 15V, IC = 400A VGE = 15V, IC = 400A, , Tcase = 125˚C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 400A IF = 400A, Tcase = 125˚C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4.5 Typ. 5.5 3.5 4.3 400 800 2.2 2.3 45 20 Max. 1 12 2 6.5 4 5 2.5 2.6 Units mA mA µA V V V A A V V nF nH Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 www.dynexsemi.com GP400DDS18 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 400A, VR = 50% VCES, dIF/dt = 3000A/µs Test Conditions IC = 400A VGE = ±15V VCE = 900V RG(ON) = RG(OFF) = 2.2Ω L ~ 100nH Min. Typ. 900 280 80 500 200 140 80 250 70 Max. 1100 350 100 650 400 180 100 Units ns ns mJ ns ns mJ µC A mJ Tcase = 125˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 400A, VR = 50% VCES, dIF/dt = 2500A/µs Test Conditions IC = 400A VGE = ±15V VCE = 900V RG(ON) = RG(OFF) = 2.2Ω L ~ 100nH Min. Typ. 1010 390 100 660 310 200 110 300 70 Max. 1200 500 150 800 400 270 150 Units ns ns mJ ns ns mJ µC A mJ 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www..


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