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GP400LSS12

Dynex Semiconductor

Single Switch IGBT Module

GP400LSS12 GP400LSS12 Single Switch IGBT Module Replaces February 2000 version, DS5306-1.2 DS5306-2.3 November 2000 FE...


Dynex Semiconductor

GP400LSS12

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Description
GP400LSS12 GP400LSS12 Single Switch IGBT Module Replaces February 2000 version, DS5306-1.2 DS5306-2.3 November 2000 FEATURES s s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200V Rating 400A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 400A 800A APPLICATIONS s s s s High Power Inverters Motor Controllers 5(E1) 2(E) Induction Heating Resonant Converters 3(G1) 1(C) 4(C1) The Powerline range of high power modules includes half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP400LSS12 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Fig. 1 Single switch circuit diagram 4 5 3 2 1 ORDERING INFORMATION Order As: GP400LSS12 Note: When ordering, please use the compete part number. Outline type code: L (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com GP400LSS12 ABSOLUTE MAXIMUM RATINGS Stresses above those ...




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