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GP500LSS06S Dataheets PDF



Part Number GP500LSS06S
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Single Switch IGBT Module
Datasheet GP500LSS06S DatasheetGP500LSS06S Datasheet (PDF)

GP500LSS06S GP500LSS06S Single Switch IGBT Module Replaces January 2000 version, DS4324-5.0 DS4324-6.0 October 2001 FEATURES s s s s KEY PARAMETERS VCES VCE(sat) IC25 IC75 IC(PK) (typ) 600V 2.2V (max) 700A (max) 500A (max) 1400A n - Channel High Switching Speed Low Forward Voltage Drop Isolated Base APPLICATIONS s s PWM Motor Control UPS 2(E) The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and current.

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GP500LSS06S GP500LSS06S Single Switch IGBT Module Replaces January 2000 version, DS4324-5.0 DS4324-6.0 October 2001 FEATURES s s s s KEY PARAMETERS VCES VCE(sat) IC25 IC75 IC(PK) (typ) 600V 2.2V (max) 700A (max) 500A (max) 1400A n - Channel High Switching Speed Low Forward Voltage Drop Isolated Base APPLICATIONS s s PWM Motor Control UPS 2(E) The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP500LSS06S is a single switch 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Typical applications include dc motor drives, ac pwm drivesand ups systems. 5 5(E1) 3(G1) 1(C) 4(C1) Fig. 1 Single switch circuit diagram 4 2 1 ORDERING INFORMATION Order as: GP500LSS06S Note: When ordering, use complete part number. 3 Outline type code: L (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com GP500LSS06S ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES VGES IC Parameter Collector-emitter voltage Gate-emitter voltage Collector current DC, Tcase = 25˚C DC, Tcase = 75˚C IC(PK) 1ms, Tcase = 25˚C 1ms, Tcase = 75˚C Pmax Visol Maximum power dissipation Isolation voltage (Transistor) Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 600 ±20 700 500 1400 1000 2500 2500 Units V V A A A A W V THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(j-c) Rth(c-h) Tj Parameter Thermal resistance - transistor Thermal resistance - diode Thermal resistance - Case to heatsink Junction temperature Conditions DC junction to case DC junction to case Min. Mounting - M6 Electrical connections - M4 Electrical connections - M6 - 40 Max. 50 125 15 150 125 125 5 2 5 Units o C/kW C/kW o Mounting torque 5Nm (with mounting grease) Transistor Diode o C/kW o C C o Tstg - Storage temperature range Screw torque o C Nm Nm Nm 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP500LSS06S ELECTRICAL CHARACTERISTICS Tj = 25˚C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tj = 125˚C IGES VGE(TH) Gate leakage current Gate threshold voltage VGE = ±20V, VCE = 0V IC = 20mA, VGE = VCE VGE = 15V, IC = 500A VGE = 15V, IC = 500A, Tj = 125˚C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 500A, IF = 500A, Tj = 125˚C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4 Typ. 2.2 2.3 1.1 1.05 54000 15 Max. 25 100 2 7.5 2.8 2.9 500 1000 1.9 1.8 Units mA mA µA V V V A A V V pF nH VCE(SAT) Collector-emitter saturation voltage Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 www.dynexsemi.com GP500LSS06S INDUCTIVE SWITCHING CHARACTERISTICS Tj = 25˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON trr Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery time Diode reverse recovery charge IF = 500A VR = 50%VCES, dIF/dt = 1500A/µs IC = 500A VGE = ±15V VCE = 50% VCES RG(ON) = RG(OFF) = 5Ω L ~ 100nH 490 225 30 225 20 ns ns mJ ns µC Conditions Min. Typ. 1150 220 45 Max. Units µs ns mJ Tj = 125˚C unless stated otherwise. td(off) tf EOFF td(on) tr EON trr Qrr Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery time Diode reverse recovery charge IF = 500A VR = 50%VCES, dIF/dt = 1500A/µs IC = 500A VGE = ±15V VCE = 50% VCES RG(ON) = RG(OFF) = 5Ω L ~ 100nH 550 320 50 310 28 ns ns mJ ns µC 1400 400 65 µs ns mJ 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP500LSS06S TYPICAL CHARACTERISTICS 1000 Common emitter 900 Tcase = 25˚C 800 Collector current, Ic - (A) Vge = 20/15V 1000 Common emitter 900.


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