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GP800DCS18 Dataheets PDF



Part Number GP800DCS18
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Chopper Switch IGBT Module
Datasheet GP800DCS18 DatasheetGP800DCS18 Datasheet (PDF)

GP800DCS18 GP800DCS18 Chopper Switch IGBT Module Replaces November 2000 version, DS5221-4.0 DS5221-5.0 January 2001 FEATURES s s s s s Non Punch Through Silicon Isolated Copper Baseplate With Al2O3 Substrate Low Inductance Internal Construction Full 1800V Rating 800A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 800A 1600A APPLICATIONS s s s s s High Power Inverters Motor Controllers Induction Heating Resonant Converters Choppers 2(C2) 4(E2) 1(E1) 3(C1).

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GP800DCS18 GP800DCS18 Chopper Switch IGBT Module Replaces November 2000 version, DS5221-4.0 DS5221-5.0 January 2001 FEATURES s s s s s Non Punch Through Silicon Isolated Copper Baseplate With Al2O3 Substrate Low Inductance Internal Construction Full 1800V Rating 800A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 800A 1600A APPLICATIONS s s s s s High Power Inverters Motor Controllers Induction Heating Resonant Converters Choppers 2(C2) 4(E2) 1(E1) 3(C1) 5(E1) 6(G1) 7(C1) The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP800DCS18 is a chopper switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Fig. 1 Chopper switch circuit diagram 5 6 3 7 8 1 ORDERING INFORMATION Order As: GP800DCS18 9 12 11 10 4 2 Note: When ordering, please use the complete part number. Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com GP800DCS18 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Isolation voltage Tcase = 55˚C 1ms, Tcase = 100˚C Tcase = 25˚C, Tj = 150˚C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1800 ±20 800 1600 6000 4000 Units V V A A W V THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 –40 150 125 125 5 2 10 ˚C ˚C ˚C Nm Nm Nm 8 ˚C/kW 40 ˚C/kW Min. Max. 21 Units ˚C/kW 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800DCS18 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125˚C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = ±20V, VCE = 0V IC = 40mA, VGE = VCE VGE = 15V, IC = 800A VGE = 15V, IC = 800A, , Tcase = 125˚C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 800A IF = 800A, Tcase = 125˚C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4.5 Typ. 5.5 3.5 4.3 2.2 2.3 90 20 Max. 1 25 4 6.5 4 5 800 1600 2.5 2.6 Units mA mA µA V V V A A V V nF nH Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 www.dynexsemi.com GP800DCS18 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 800A, VR = 50% VCES, dIF/dt = 3500A/µs Test Conditions IC = 800A VGE = ±15V VCE = 900V RG(ON) = RG(OFF) = 2.2Ω L ~ 100nH Min. Typ. 1000 200 200 300 200 200 180 450 120 Max. 1200 300 300 400 300 300 240 Units ns ns mJ ns ns mJ µC A mJ Tcase = 125˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 800A, VR = 50% VCES, dIF/dt = 3000A/µs Test Conditions IC = 800A VGE = ±15V VCE = 900V RG(ON) = RG(OFF) = 2.2Ω L ~ 100nH Min. Typ. 1200 250 300 400 250 350 300 525 190 Max. 1400 350 400 550 350 450 400 Units ns ns mJ ns ns mJ µC A mJ 4/10 Caution: This device is.


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