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GP800NSM33

Dynex Semiconductor

Hi-Reliability Single Switch IGBT Module Preliminary Information

GP800NSM33 GP800NSM33 Hi-Reliability Single Switch IGBT Module Preliminary Information DS5372-2.0 February 2001 FEATUR...


Dynex Semiconductor

GP800NSM33

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Description
GP800NSM33 GP800NSM33 Hi-Reliability Single Switch IGBT Module Preliminary Information DS5372-2.0 February 2001 FEATURES s s s s s High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates 3300V Rating 800A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 3300V 3.4V 800A 1600A External connection APPLICATIONS s s s s C1 Aux C C2 High Reliability Inverters Motor Controllers Traction Drives Resonant Converters G Aux E E1 E2 External connection The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP800NSM33 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Fig. 1 Single switch circuit diagram C1 E1 E2 G C1 ORDERING INFORMATION Order As: GP800NSM33 Note: When ordering, please use the complete part number. E2 - Aux Emitter C1 - Aux Collector E2 C2 Outline type code: N (See package details for further information) Fig. 2 Electri...




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