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GBU1G

Fairchild Semiconductor

1.0 Ampere Glass Passivated Rectifier

GF1A-GF1M GF1A - GF1M Features • • • • Low forward voltage drop. High current capability. Easy pick and place. High sur...


Fairchild Semiconductor

GBU1G

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Description
GF1A-GF1M GF1A - GF1M Features Low forward voltage drop. High current capability. Easy pick and place. High surge current capability. 3.93 3.73 0.181 (4.597) 0.157 (3.988) 0.062 (1.575) 0.055 (1.397) 2 1 0.114 (2.896) 0.098 (2.489) 0.208 (5.283) 0.188 (4.775) 1.67 1.47 + SMA/DO-214AC 2.38 2.18 5.49 5.29 Minimum Recommended Land Pattern 0.096 (2.438) 0.078 (1.981) COLOR BAND DENOTES CATHODE 0.060 (1.524) 0.030 (0.762) 0.008 (0.203) 0.002 (0.051) 0.012 (0.305) 0.006 (0.152) 1.0 Ampere Glass Passivated Rectifier Absolute Maximum Ratings* Symbol IO if(surge) PD RθJA RθJC Tstg TJ TA = 25°C unless otherwise noted Parameter Average Rectified Current @ TL = 125°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient ** Thermal Resistance, Junction to Case ** Storage Temperature Range Operating Junction Temperature Value 1.0 Units A 30 2.0 13 80 26 -65 to +175 -65 to +175 A W mW/°C °C/W °C/W °C °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Device mounted on PCB with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas. Electrical Characteristics Parameter 1A Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) Maximum Reverse Current @ rated VR TA = 25°C TA = 125°C Maximum Forward Voltage @ 1.0 A Maximum Reverse Recovery Time IF = 0.5 A, IR = 1....




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