GDU90-20421

GDU 90-20421 GDU 90-20421 Gate Drive Unit Replaces March 1998 version, DS4565-2.1 DS4565-3.0 January 2000 This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit. APPLICATIONS s Used with Gate Turn-Off Thyristors in high current switching applications KEY PARAMETERS IFGM IG(ON) dIGQ/dt 30A 7A 40A/µs CONDITIONS - (UNLESS STATED OTHERWISE) V1 = +5V Test circuit GTO GDU connection to GTO Test circuit emitter and gate drive emitter Test circuit emitter current Test circuit receiver and gate drive receiver V2 = +15V DG646BH 500mm CO - AX cable type RC5327230 Hewlett Packard versatile link HFBR1524 30mA Hewlett Packard versatile link HFBR2524 V3 = -15V ELECTRICAL CHARACTERISTICS Symbol IV1 IV2 IV3 V1(Min) V2(Min) V3(Min) IFGM IG(ON) dIFG/dt dIGQ/dt Parameter +5V PSU current +15V PSU current -15V PSU current +5V PSU minimum +15V PSU minimum -15V PSU minimum Peak forward gate current On-state gate current Rate of rise of positive gate current Rate of rise of negative gate current Conditions 700Hz, 50% duty cycle 700Hz 700Hz, IT = 2000A GTO Tj = 125˚C Min. Typ. Max. 3.80 0.73 9.20 Units A A A V V V A A A/µs A/µs 3.8 14.0 14.0 30 7 30 40 Measured 10 - 75% IFGM IT = 2000A, 90% IG(ON) - 50% IGQM - - 1/4 GDU 90-20421 TIMING CHARACTERISTICS Symbol t1*† t2 t3*† t4 t5* t6 t7 t8* t9 t10 t11 t12 Parameter Conditions Adjustable by R81 + R82 Min. 2 0.2 5.0 Typ. Max. 3 0.4 5.8 Units µs µs µs µs µs µs µs µs µs µs µs µs ...