GDU90-20722

GDU 90 20722 GDU 90-20722 Gate Drive Unit Replaces March 1998 version, DS4568-3.1 DS4568-4.0 January 2000 This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit. APPLICATIONS s Used with Gate Turn-Off Thyristors in high current switching applications KEY PARAMETERS IFGM IG(ON) dIGQ/dt 40A 10A 50A/µs CONDITIONS - (UNLESS STATED OTHERWISE) V1 = +5V Test circuit GTO GDU connection to GTO V2 = +15V DG858BW 500mm CO - AX cable type RC5327230 (2 cables in parallel) Honeywell sweetspot HFE 4020 - 013 30mA Honeywell sweetspot HFD 3029 - 002 V3 = -15V Test circuit emitter and gate drive emitter Test circuit emitter current Test circuit receiver and gate drive receiver ELECTRICAL CHARACTERISTICS Symbol IV1 IV2 IV3 V1(Min) V2(Min) V3(Min) IFGM IG(ON) dIFG/dt dIGQ/dt Parameter +5V PSU current +15V PSU current -15V PSU current +5V PSU minimum +15V PSU minimum -15V PSU minimum Peak forward gate current On-state gate current Rate of rise of positive gate current Rate of rise of negative gate current Conditions 500Hz, 50% duty cycle 500Hz 500Hz, IT = 3000A GTO Tj= 125˚C Min. Typ. Max. 5.5 0.70 12 Units A A A V V V A A A/µs A/µs 3.8 14.0 14.0 40 10 40 50 Measured 10 - 75% IFGM IT = 3000A, 90% IG(ON) - 50% IGQM - - 1/4 GDU 90 20722 TIMING CHARACTERISTICS Symbol t1*† t2 t3*† t4 t5* t6 t7 t8* t9 t10 t11 t12 Parameter No response pulse width of input signal Delay time emitter current to receiver o/p Turn-on delay emitter c...