rugged IGBT. GF19NC60KD Datasheet

GF19NC60KD IGBT. Datasheet pdf. Equivalent

GF19NC60KD Datasheet
Recommendation GF19NC60KD Datasheet
Part GF19NC60KD
Description 600V short-circuit rugged IGBT
Feature GF19NC60KD; STGB19NC60KD, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Features ■ Low on-vo.
Manufacture STMicroelectronics
Datasheet
Download GF19NC60KD Datasheet




STMicroelectronics GF19NC60KD
STGB19NC60KDT4,
STGF19NC60KD, STGP19NC60KD
20 A, 600 V short-circuit rugged IGBT
Datasheet - production data
TAB
3
1
D2 PAK
TAB
3
2
1
TO-220FP
TO-220
3
12
Figure 1: Internal schematic diagram
Features
Low on voltage drop (VCE(sat))
Low CRES / CIES ratio (no cross-conduction
susceptibility)
Short-circuit withstand time 10 μs
IGBT co-packaged with ultrafast free-
wheeling diode
Applications
High frequency inverters
Motor drives
Description
These devices are very fast IGBTs developed
using advanced PowerMESH™ technology. This
process guarantees an excellent trade-off
between switching performance and low on-state
behavior.
Order code
STGB19NC60KDT4
STGF19NC60KD
STGP19NC60KD
Table 1: Device summary
Marking
Package
GB19NC60KD
D²PAK
GF19NC60KD
TO-220FP
GP19NC60KD
TO-220
Packing
Tape and reel
Tube
July 2017
DocID14701 Rev 4
This is information on a product in full production.
1/26
www.st.com



STMicroelectronics GF19NC60KD
Contents
Contents
STGB19NC60KDT4, STGF19NC60KD,
STGP19NC60KD
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 7
3 Test circuits ................................................................................... 10
4 Package information ..................................................................... 11
4.1 D2PAK (TO-263) type A package information ................................. 11
4.2 D²PAK (TO-263) type B package information ................................. 14
4.3 D²PAK type A packing information .................................................. 17
4.4 D²PAK type B packing information .................................................. 19
4.5 TO-220FP package information ...................................................... 21
4.6 TO-220 type A package information................................................ 23
5 Revision history ............................................................................ 25
2/26 DocID14701 Rev 4



STMicroelectronics GF19NC60KD
STGB19NC60KDT4, STGF19NC60KD,
STGP19NC60KD
Electrical ratings
1 Electrical ratings
Symbol
VCES
IC(1)
ICL(2)
ICP(3)
VGE
IF
IFSM
PTOT
VISO
tscw
Tstg
TJ
Table 2: Absolute maximum ratings
Parameter
Value
D²PAK, TO-220 TO-220FP
Collector-emitter voltage (VGE = 0 V)
Continuous collector current at TC = 25 °C
600
35
16
Continuous collector current at TC = 100 °C
20 10
Turn-off latching current
75
Pulsed collector current
75
Gate-emitter voltage
±20
Diode RMS forward current at TC= 25 °C
Surge non repetitive forward current tp= 10 ms
sinusoidal
20
50
Total dissipation at TC = 25 °C
125 32
Insulation withstand voltage (RMS) from all three
leads to external heat-sink (t=1 s; TC= 25 °C)
Short-circuit withstand time VCE = 300 V,
Tj = 125 °C, RG = 10 Ω, VGE = 12 V
Storage temperature range
Operating junction temperature range
2500
10
- 55 to 150
Unit
V
A
A
A
A
V
A
A
W
V
μs
°C
Notes:
(1)Calculated according to the iterative formula:
(2)Vclamp = 80 % VCES, VGE = 15 V, RG = 10 Ω, TJ = 150 °C.
(3)Pulse width limited by maximum junction temperature.
Symbol
Rthj-case
Rthj-case
Rthj-amb
Table 3: Thermal data
Parameter
Value
D²PAK, TO-220 TO-220FP
Thermal resistance junction-case IGBT
1 3.9
Thermal resistance junction-case diode
3 5.6
Thermal resistance junction-ambient
62.5
Unit
°C/W
DocID14701 Rev 4
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