Document
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC941TM
2SC941TM
High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications
Unit: mm
· Low noise figure: NF = 3.5dB (max) (f = 1 MHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
35 30 4 100 20 400 125 -55~125
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Reverse transfer capacitance Collector-base time constant Noise figure
ICBO
VCB = 20 V, IE = 0
IEBO
VEB = 2 V, IC = 0
hFE VCE = 12 V, IC = 2 mA
(Note)
VCE (sat) VBE (sat)
fT Cre Cc・rbb’
NF
IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 2 mA VCE = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IE = -1 mA, f = 30 MHz VCE = 10 V, IE = -1 mA, f = 1 MHz, Rg = 50 W
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 1.0 mA
40 ¾ 240
¾ ¾ 0.4 V ¾ ¾ 1.0 V 80 120 ¾ MHz ¾ 2.2 3.0 pF ¾ 30 50 ps ¾ 2.0 3.5 dB
1 2003-03-24
Y Parameters (typ.) (common emitter VCE = 6 V, IE = -1 mA, f = 1 MHz)
Characteristics
Input conductance Input capacitance Output conductance Output capacitance Forward transfer admittance Phase angle of forward transfer admittance Reverse transfer admittance Phase angle of reverse transfer admittance
Symbol
gie Cie goe Coe ïyfeï
qfe
ïyreï
qre
2SC941-R
0.5 50 4 3.7 36 -1.6
14
-90
2SC941-O
0.35 48 5 3.4 36 -1.6
14
-90
2SC941TM
2SC941-Y
0.22 46 6.5 3.2 36 -1.6
14
-90
Unit
mS pF mS pF mS
°
mS
°
2 2003-03-24
2SC941TM
3 2003-03-24
2SC941TM
4 2003-03-24
2SC941TM
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in t.