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C941 Dataheets PDF



Part Number C941
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SC941
Datasheet C941 DatasheetC941 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC941TM 2SC941TM High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications Unit: mm · Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO .

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC941TM 2SC941TM High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications Unit: mm · Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 4 100 20 400 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Reverse transfer capacitance Collector-base time constant Noise figure ICBO VCB = 20 V, IE = 0 IEBO VEB = 2 V, IC = 0 hFE VCE = 12 V, IC = 2 mA (Note) VCE (sat) VBE (sat) fT Cre Cc・rbb’ NF IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 2 mA VCE = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IE = -1 mA, f = 30 MHz VCE = 10 V, IE = -1 mA, f = 1 MHz, Rg = 50 W Note: hFE classification R: 40~80, O: 70~140, Y: 120~240 Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 1.0 mA 40 ¾ 240 ¾ ¾ 0.4 V ¾ ¾ 1.0 V 80 120 ¾ MHz ¾ 2.2 3.0 pF ¾ 30 50 ps ¾ 2.0 3.5 dB 1 2003-03-24 Y Parameters (typ.) (common emitter VCE = 6 V, IE = -1 mA, f = 1 MHz) Characteristics Input conductance Input capacitance Output conductance Output capacitance Forward transfer admittance Phase angle of forward transfer admittance Reverse transfer admittance Phase angle of reverse transfer admittance Symbol gie Cie goe Coe ïyfeï qfe ïyreï qre 2SC941-R 0.5 50 4 3.7 36 -1.6 14 -90 2SC941-O 0.35 48 5 3.4 36 -1.6 14 -90 2SC941TM 2SC941-Y 0.22 46 6.5 3.2 36 -1.6 14 -90 Unit mS pF mS pF mS ° mS ° 2 2003-03-24 2SC941TM 3 2003-03-24 2SC941TM 4 2003-03-24 2SC941TM RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in t.


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