C941TM

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC941TM 2SC941TM High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications Unit: mm · Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 4 100 20 400 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Reverse transfer capacitance Collector-base time constant Noise figure ICBO VCB = 20 V, IE = 0 IEBO VEB = 2 V, IC = 0 hFE VCE = 12 V, IC = 2 mA (Note) VCE (sat) VBE (sat) fT Cre Cc･rbb’ NF IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 2 mA VCE = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IE = -1 mA, f = 30 MHz VCE = 10 V, IE = -1 mA, f = 1 MHz, Rg = 50 W Note: hFE classification R: 40~80, O: 70~140, Y: 120~240 Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 1.0 mA 40 ¾ 240 ¾ ¾ 0.4 V ¾ ¾ 1.0 V 80 120 ¾ MHz ¾ 2.2 3.0 pF ¾ 30 50 ps ¾ 2.0 3.5 dB 1 2003-03-24 Y Parameters (typ.) (common emitter VCE = 6 V,...