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MRF629

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

MRF629 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF629 is Designed for UHF large signal, FM Land Mobile App...


Advanced Semiconductor

MRF629

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Description
MRF629 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF629 is Designed for UHF large signal, FM Land Mobile Applications up to 470 MHz. FEATURES: Grounded Emitter PG = 8.0 dB at 2.0 W/470 MHz Omnigold™ Metalization System MAXIMUM RATINGS IC 400 mA VCEO 16 V VCES 36 V VEBO 4.0 V PDISS 5.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 35 °C/W PACKAGE STYLE TO 205AD MILLIMETER S INCHES DIM MIN MAX MIN MAX A 9.02 9.29 0.355 0.366 B 8.01 8.50 0.315 0.335 C 4.20 4.57 0.165 0.180 D 0.44 0.53 0.017 0.021 E 0.44 0.88 0.017 0.035 F 0.41 0.48 0.016 0.019 G 5.08 BSC 0.200 BSC H 0.72 0.86 0.028 0.034 J 0.74 0.01 0.029 0.040 K 12.70 19.05 0.500 0.750 L 6.35 -- 0.25 -- M 45° BSC 45 °BSC P -- 1.27 -- 0.050 R 2.54 -- 0.10 -- 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS BVCEO IC = 50 mA BVCES IC = 50 mA BVEBO IE = 1.0 mA ICBO VCB = 15 V hFE VCE = 5.0 V IC = 100 mA COB VCB = 12.5 V f = 1.0 MHz PG ηC VCC = 12.5 V POUT = 2.0 W f = 470 MHz MINIMUM TYPICAL MAXIMUM 16 36 4.0 1.0 20 200 UNITS V V V mA --- 15 pF 8.0 dB 50 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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