POWER TRANSISTOR. MRF629 Datasheet

MRF629 TRANSISTOR. Datasheet pdf. Equivalent

MRF629 Datasheet
Recommendation MRF629 Datasheet
Part MRF629
Description NPN SILICON RF POWER TRANSISTOR
Feature MRF629; MRF629 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF629 is Designed for UHF large signal.
Manufacture Advanced Semiconductor
Datasheet
Download MRF629 Datasheet




Advanced Semiconductor MRF629
MRF629
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF629 is Designed for
UHF large signal, FM Land Mobile
Applications up to 470 MHz.
FEATURES:
Grounded Emitter
PG = 8.0 dB at 2.0 W/470 MHz
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 400 mA
VCEO
16 V
VCES
36 V
VEBO
4.0 V
PDISS
5.0 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC 35 °C/W
PACKAGE STYLE TO 205AD
MILLIMETER
S INCHES
DIM MIN MAX MIN MAX
A 9.02 9.29 0.355 0.366
B 8.01 8.50 0.315 0.335
C 4.20 4.57 0.165 0.180
D 0.44 0.53 0.017 0.021
E 0.44 0.88 0.017 0.035
F 0.41 0.48 0.016 0.019
G 5.08 BSC 0.200 BSC
H 0.72 0.86 0.028 0.034
J 0.74 0.01 0.029 0.040
K 12.70 19.05 0.500 0.750
L 6.35 -- 0.25 --
M 45° BSC
45 °BSC
P -- 1.27 -- 0.050
R 2.54 -- 0.10 --
1 = COLLECTOR
2 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCES
IC = 50 mA
BVEBO
IE = 1.0 mA
ICBO
VCB = 15 V
hFE VCE = 5.0 V
IC = 100 mA
COB VCB = 12.5 V
f = 1.0 MHz
PG
ηC
VCC = 12.5 V
POUT = 2.0 W
f = 470 MHz
MINIMUM TYPICAL MAXIMUM
16
36
4.0
1.0
20 200
UNITS
V
V
V
mA
---
15 pF
8.0 dB
50 %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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