SiHB20N50E

www.vishay.com SiHB20N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 92 10 19 Single 0.184 D2PAK (TO-263) D GD S G S N-Channel MOSFET FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Computing - PC silver box / ATX power supplies Lighting - Two stage LED lighting Consumer electronics Applications using hard switched topologies - Power factor correction (PFC) - Two switch forward converter - Flyback converter Switch mode power supplies (SMPS) ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free D2PAK (TO-263) SiHB20N50E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage AC (f > 1 Hz) VDS VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode dV/dt d VDS = 0 V to 80 % VDS Soldering Recommendations (Peak Temperature) c for 10 s ID IDM EAS PD TJ, Tstg dV/dt Notes a. Repetitive rating; pu...