SST26WF040BA

SST26WF040B/040BA SST26WF080B/080BA 1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory Features Single Voltage Read and Write Operations - 1.65-1.95V Serial Interface Architecture - Mode 0 and Mode 3 - Nibble-wide multiplexed I/O’s with SPI-like serial command structure - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol High Speed Clock Frequency - 104 MHz max Burst Modes - Continuous linear burst - 8/16/32/64 Byte linear burst with wrap-around Superior Reliability - Endurance: 100,000 Cycles (min) - Greater than 100 years Data Retention Low Power Consumption: - Active Read current: 15 mA (typical @ 104 MHz) - Standby current: 10 μA (typical) - Deep Power-Down current: 1.8 μA (typical) Fast Erase Time - Sector/Block Erase: 18 ms (typ), 25 ms (max) - Chip Erase: 35 ms (typ), 50 ms (max) Page-Program - 256 Bytes per page in x1 or x4 mode End-of-Write Detection - Software polling the BUSY bit in status register Flexible Erase Capability - Uniform 4 KByte sectors - Four 8 KByte top and bottom parameter overlay blocks - One 32 KByte top and bottom overlay block - Uniform 64 KByte overlay blocks Write-Suspend - Suspend Program or Erase operation to access another block/sector Software Reset (RST) mode Software Write Protection - Individual-Block Write Protection with permanent lock-down capability - 64 KByte blocks, two 32 KByte blocks, and eight 8 KByte parameter blocks - Read Protection on top and bottom 8 KByte parameter blocks Security I...