Document
IR1167(A,B)S
SMARTRECTIFIERTM CONTROL IC
Features
Secondary side high speed SR controller DCM, CrCM and CCM flyback topologies 200 V proprietary IC technology Max 500 KHz switching frequency Anti-bounce logic and UVLO protection 7 A peak turn off drive current Micropower start-up & ultra low quiescent current 10.7 / 14.5 V gate drive clamp 50ns turn-off propagation delay Vcc range from 11.3 V to 20 V Direct sensing of MOSFET drain voltage Minimal component count Simple design Lead-free Compatible with 1 W Standby, Energy Star, CECP, etc.
Product Summary
Topology
VD
VOUT
IR1167A IR1167B
Io+ & I o- (typ.)
Turn on Propagation Delay (typ.)
Turn off Propagation Delay (typ.)
Package Options
Flyback 200 V 10.7 V 14.5 V +2 A / -7 A 60 ns
40 ns
Typical Applications
LCD & PDP TV, Telecom SMPS, AC-DC adapters, ATX SMPS, Server SMPS
8-Lead SOIC
Ordering Information
Base Part Number
IR1167AS IR1167BS
Package Type SOIC8N
Standard Pack
Form
Quantity
Tape and Reel
2500
Tape and Reel
2500
Complete Part Number IR1167ASTRPBF IR1167BSTRPBF
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Nov 6, 2013
IR1167(A,B)S
Typical Connection Diagram
Vin
Rs
Cs Ci
XFM
Rdc
RMOT
U1
1 VCC VGATE 8
2 OVT GND 7
3 MOT
VS 6
4 EN
VD 5
IR1IR1161767(A1 ,B)S Rg
Cdc
Co
LOAD
Rtn Q1
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Table of Contents
Ordering Information Description Absolute Maximum Ratings Electrical Characteristics Functional Block Diagram Lead Definitions Lead Assignments Detailed Pin Description Application Information and Additional Details Package Details Tape and Reel Details Part Marking Information Qualification Information
IR1167(A,B)S
Page
1 4 5 6 8 9 9 10 11 22 23 24 25
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Nov 6, 2013
IR1167(A,B)S
Description
IR1167S is a smart secondary side driver IC designed to drive N-Channel power MOSFETs used as synchronous rectifiers in isolated Flyback converters. The IC can control one or more paralleled N-MOSFETs to emulate the behavior of Schottky diode rectifiers. The drain to source voltage is sensed differentially to determine the polarity of the current and turn the power switch on and off in proximity of the zero current transition. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and double-pulse suppression which allow reliable operation in continuous, discontinuous and critical current mode operation and both fixed and variable frequency modes.
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IR1167(A,B)S
Absolute Maximum Ratings
Stress beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these conditions are not implied. All
voltages are absolute voltages referenced to GND. Thermal resistance and power dissipation are measured under
board mounted and still air conditions.
Parameters
Symbol Min.
Max.
Units
Remarks
Supply Voltage Enable Voltage Cont. Drain Sense Voltage Pulse Drain Sense Voltage Source Sense Voltage
VCC -0.3 VEN -0.3 VD -3 VD -5 VS -3
20 20 200 200 20
V
Gate Voltage
VGATE
-0.3
20
VCC=20V, Gate off
Operating Junction Temperature Storage Temperature Thermal Resistance
TJ TS RθJA
-40 -55
150 °C
150 128 °C/W SOIC-8
Package Power Dissipation ESD Protection
PD VESD
970 mW SOIC-8, TAMB=25°C 2 kV Human Body Model †
Switching Frequency
fsw 500 kHz
† Per EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kΩ series resistor).
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IR1167(A,B)S
Electrical Characteristics
The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and junction temperature range TJ from – 25° C to 125°C. Typical values represent the median values, which are related to 25°C. If not otherwise stated, a supply voltage of VCC =15V is assumed for test condition.
Supply Section Parameters
Supply Voltage Operating Range VCC Turn On Threshold VCC Turn Off Threshold (Under Voltage Lock Out) VCC Turn On/Off Hysteresis
IR1167A Operating Current
IR1167B
Quiescent Current Start-up Current Sleep Current Enable Voltage High Enable Voltage Low Enable Pull-up Resistance
Symbol VCC
VCC ON VCC UVLO VCC HYST
ICC
IQCC ICC START
ISLEEP VENHI VENLO REN
Min. 12 9.8 8.4 1.4
2.15 1.2
Typ.
10.5
9
1.55 8.5 50 10.3 66 1.8 100 150 2.75 1.6 1.5
Max.
18
11.3
9.7
1.7 10 65 12 80 2.2 200 200 3.2 2
Units GBD
V
Remarks
CLOAD=1nF, fsw=400kHz CLOAD=10nF, fsw=400kHz mA CLOAD=1nF, fsw=400kHz CLOAD=10nF, fsw=400kHz
µA
VCC=VCC ON - 0.1V VEN=0V, VCC =15V
V
MΩ GBD
Comparator Section Parameters
Turn-off Threshold
Turn-on Threshold Hysteresis Input Bias Current Comparator Input Offset Input CM Voltage Range
Symbol
VTH1
VTH2 VHYST IIBIAS1 IIBIAS2 VOFFSET VCM
Min. -7 -15 -23
-150
-0.15
Typ. -3.5 -10.5 -19
55 1 30
Max. 0 -7 -15 -50
7.5 100
2 2
Units mV.