ST16N10
N Channel Enhancement Mode MOSFET
16.0A
DESCRIPTION
ST16N10 is the N-Channel logic enhancement mode power field ...
ST16N10
N Channel Enhancement Mode MOSFET
16.0A
DESCRIPTION
ST16N10 is the N-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)
TO-252
TO-251
FEATURE
� 100V/ 10A, RDS(ON) = 140mΩ @VGS = 10V
� Super high density cell design for extremely low RDS(ON)
� Exceptional on-resistance and maximum DC current capability
� TO-252,TO-251 package design
PART MARKING
Y: Year Code A: Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009, Stanson Corp.
ST16N10 2009. V1
ST16N10
N Channel Enhancement Mode MOSFET
16.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=100℃
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Power Dissipation
TA=25℃
PD
Operation Junction Temperature
TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
100 ±20 16.0 12.0 60 16 79 150 -55/150 110
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.c...