Document
Eternal Semiconductor Inc. ET6303
P-Channel Enhancement-Mode MOSFET (-30V, -47A)
PRODUCT SUMMARY
VDSS
ID
-30V
-47A
RDS(on) (mΩ) Typ.
8.5 @ VGS = 10V, ID=20A 15@ VGS = 4.5V, ID=10A
Features
• Super high density cell design for extremely low RDS(ON) • Exceptional on-resistance and maximum DC current capability
• Fast Switching • Lead(Pb)-free and halogen-free
Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current (Continuous)@TA=25°C
ID
Drain Current (Continuous)@TA=75°C
IDM
PD
IS Tj, Tstg RQJA
Drain Current (Pulsed) a Total Power Dissipation @TA=25°C Total Power Dissipation @TA=75°C Maximum Diode Forward Current Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)b
a: Repetitive Rating: Pulse width limited by the maximum junction temperature. b: 1-in2 2oz Cu PCB board
Ratings
-30 ±20 -47 -30 -188 38 22 -47 -55 to +150 35
Units
V V A A A W W A °C °C/W
DS-ET6303-EN-REV1.0
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Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
• Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
• On Characteristics
VGS(th) Gate Threshold Voltage
VDS=30V, VGS=0V VGS=±20V, VDS=0V
VDS=VGS, ID=250uA
ET6303
Min. Typ. Max. Unit
-30 -
-
V
-
-
1 μA
-
- ±100 nA
-1.0 -1.8 -2.5 V
RDS(on)
Drain-Source On-State Resistance
VGS=-10V, ID=-20A VGS=-4.5V, ID=-16A
- 8.5 11
mΩ
-
15 20
• Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
VDS=-15V, VGS=0V, f=1MHz
Crss Reverse Transfer Capacitance
• Switching Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS=-15V, ID=20A, VGS=-10V
Qgd Gate-Drain Charge
td(on) Turn-on Delay Time
tr Turn-on Rise Time td(off) Turn-off Delay Time
VDD=15V, RL=15Ω, ID=20A, VGEN=10V, RG=6Ω
tf Turn-off Fall Time
• Drain-Source Diode Characteristics
VSD Drain-Source Diode Forward
VGS=0V, IS=20A
Note: Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
- 3320 -
- 395
-
PF
- 245 -
-
39
-
-
7
- nC
-
11
-
-
15
-
-
33
-
nS
-
67
-
-
21
-
-
- -1.2 V
Switching Time Test Circuit and waveforms
DS-ET6303-EN-REV1.0
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ET6303
Typical Characteristics Curves (Ta=25°C, unless otherwise note)
DS-ET6303-EN-REV1.0
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Eternal Semiconductor Inc. ET6303
DS-ET6303-EN-REV1.0
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Eternal Semiconductor Inc.
PDFN3333 PACKAGE OUTLINE DIMENSIONS
ET6303
DS-ET6303-EN-REV1.0
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