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ET6303 Dataheets PDF



Part Number ET6303
Manufacturers Etek Microelectronics
Logo Etek Microelectronics
Description P-Channel MOSFET
Datasheet ET6303 DatasheetET6303 Datasheet (PDF)

Eternal Semiconductor Inc. ET6303 P-Channel Enhancement-Mode MOSFET (-30V, -47A) PRODUCT SUMMARY VDSS ID -30V -47A RDS(on) (mΩ) Typ. 8.5 @ VGS = 10V, ID=20A 15@ VGS = 4.5V, ID=10A Features • Super high density cell design for extremely low RDS(ON) • Exceptional on-resistance and maximum DC current capability • Fast Switching • Lead(Pb)-free and halogen-free Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Symbol Para.

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Eternal Semiconductor Inc. ET6303 P-Channel Enhancement-Mode MOSFET (-30V, -47A) PRODUCT SUMMARY VDSS ID -30V -47A RDS(on) (mΩ) Typ. 8.5 @ VGS = 10V, ID=20A 15@ VGS = 4.5V, ID=10A Features • Super high density cell design for extremely low RDS(ON) • Exceptional on-resistance and maximum DC current capability • Fast Switching • Lead(Pb)-free and halogen-free Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Drain Current (Continuous)@TA=25°C ID Drain Current (Continuous)@TA=75°C IDM PD IS Tj, Tstg RQJA Drain Current (Pulsed) a Total Power Dissipation @TA=25°C Total Power Dissipation @TA=75°C Maximum Diode Forward Current Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)b a: Repetitive Rating: Pulse width limited by the maximum junction temperature. b: 1-in2 2oz Cu PCB board Ratings -30 ±20 -47 -30 -188 38 22 -47 -55 to +150 35 Units V V A A A W W A °C °C/W DS-ET6303-EN-REV1.0 Page 1 of 5 http://yieternal.com Eternal Semiconductor Inc. Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions • Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current • On Characteristics VGS(th) Gate Threshold Voltage VDS=30V, VGS=0V VGS=±20V, VDS=0V VDS=VGS, ID=250uA ET6303 Min. Typ. Max. Unit -30 - - V - - 1 μA - - ±100 nA -1.0 -1.8 -2.5 V RDS(on) Drain-Source On-State Resistance VGS=-10V, ID=-20A VGS=-4.5V, ID=-16A - 8.5 11 mΩ - 15 20 • Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance VDS=-15V, VGS=0V, f=1MHz Crss Reverse Transfer Capacitance • Switching Characteristics Qg Total Gate Charge Qgs Gate-Source Charge VDS=-15V, ID=20A, VGS=-10V Qgd Gate-Drain Charge td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time VDD=15V, RL=15Ω, ID=20A, VGEN=10V, RG=6Ω tf Turn-off Fall Time • Drain-Source Diode Characteristics VSD Drain-Source Diode Forward VGS=0V, IS=20A Note: Pulse Test: Pulse Width≤300us, Duty Cycle≤2% - 3320 - - 395 - PF - 245 - - 39 - - 7 - nC - 11 - - 15 - - 33 - nS - 67 - - 21 - - - -1.2 V Switching Time Test Circuit and waveforms DS-ET6303-EN-REV1.0 Page 2 of 5 http://yieternal.com Eternal Semiconductor Inc. ET6303 Typical Characteristics Curves (Ta=25°C, unless otherwise note) DS-ET6303-EN-REV1.0 Page 3 of 5 http://yieternal.com Eternal Semiconductor Inc. ET6303 DS-ET6303-EN-REV1.0 Page 4 of 5 http://yieternal.com Eternal Semiconductor Inc. PDFN3333 PACKAGE OUTLINE DIMENSIONS ET6303 DS-ET6303-EN-REV1.0 Page 5 of 5 http://yieternal.com .


ET6304 ET6303 ET6302


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