Document
STD60N3LH5 STP60N3LH5, STU60N3LH5
N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET
Features
Type STD60N3LH5 STP60N3LH5 STU60N3LH5
VDSS 30 V 30 V 30 V
RDS(on) max 0.008 Ω 0.0084 Ω 0.0084 Ω
ID 48 A 48 A 48 A
■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses
Application
■ Switching applications
Description
This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.
3 2 1
TO-220
3 1
DPAK
3 2 1
IPAK
Figure 1. Internal schematic diagram
Table 1. Device summary Order codes STD60N3LH5 STP60N3LH5 STU60N3LH5
Marking 60N3LH5 60N3LH5 60N3LH5
Package DPAK TO-220 IPAK
Packaging Tape and reel
Tube Tube
April 2009
Doc ID 14079 Rev 3
1/16
www.st.com
16
Contents
Contents
STD60N3LH5, STP60N3LH5, STU60N3LH5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 14079 Rev 3
STD60N3LH5, STP60N3LH5, STU60N3LH5
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS=0)
VDS Drain-source voltage (VGS = 0) @ TJMAX
VGS ID (1)
Gate-Source voltage Drain current (continuous) at TC = 25 °C
ID IDM (2)
Drain current (continuous) at TC = 100 °C Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
EAS (3) Single pulse avalanche energy
Tj Operating junction temperature Tstg Storage temperature
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25 °C, Id = 24 A, Vdd = 12 V
Value 30 35 ± 22 48 42.8 192 60 0.4 160
-55 to 175
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case Rthj-amb
Tj
Thermal resistance junction-case max Thermal resistance junction-case max Maximum lead temperature for soldering purpose
Value 2.5 100 275
Unit V V V A A A W
W/°C mJ °C
Unit °C/W °C/W
°C
Doc ID 14079 Rev 3
3/16
Electrical characteristics
STD60N3LH5, STP60N3LH5, STU60N3LH5
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
V(BR)DSS
Drain-source breakdown Voltage
IDSS IGSS VGS(th)
Zero gate voltage drain current (VGS = 0)
Gate body leakage current (VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on resistance
Test conditions
ID = 250 µA, VGS= 0
VDS = 30 V VDS = 30 V,Tc = 125 °C
VGS = ± 22 V
VDS= VGS, ID = 250 µA VGS= 10 V, ID= 24 A SMD version VGS= 10 V, ID= 24 A VGS= 5 V, ID= 24 A SMD version VGS= 5 V, ID= 24 A
Min. Typ. Max. Unit
30 V
1 µA 10 µA
±100 nA
1 1.8
3V
0.0072 0.008 Ω
0.0076 0.0084 Ω
0.0088 0.011 Ω
0.0092 0.0114 Ω
Table 5. Dynamic
Symbol
Parameter
Ciss Coss Crss
Qg Qgs Qgd
Qgs1
Qgs2
Input capacitance Output capacitance Reverse transfer capacitance
Total gate charge Gate-source charge Gate-drain charge
Pre Vth gate-to-source charge Post Vth gate-to-source charge
RG Gate input resistance
Test conditions
VDS =25 V, f=1 MHz, VGS=0
VDD=15 V, ID = 48 A VGS =5 V (Figure 14)
VDD=15 V, ID = 48 A VGS =5 V (Figure 19)
f=1 MHz gate bias Bias= 0 test signal level=20 mV open drain
Min. Typ. Max. Unit
1350
pF
- 265 - pF
32 pF
8.8 nC - 4.7 - nC
2.2 nC
2.2 nC --
2.5 nC
- 1.1 - Ω
4/16 Doc ID 14079 Rev 3
STD60N3LH5, STP60N3LH5, STU60N3LH5
Electrical characteristics
Table 6. Switching on/off (resistive load)
Symbol
Parameter
Test conditions
td(on) tr
Turn-on delay time Rise time
VDD=10 V, ID= 24 A,
RG=4.7 Ω, VGS= 10 V (Figure 13 and Figure 18)
td(off) tf
Turn-off delay time Fall time
VDD=10 V, ID= 24 A,
RG=4.7 Ω, VGS= 10 V (Figure 13 and Figure 18)
Min. Typ. Max. Unit
6 -
33
ns -
ns
19 ns --
4.2 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD ISDM
Source-drain current Source-drain current (pulsed)(1)
VSD Forward on voltage
ISD=24 A, VGS=0
trr Qrr IRRM
Reverse recovery time Reverse recovery charge Reverse recovery current
ISD=48 A,
di/dt =100 A/µs, VDD=20 V, (Figure 15)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
48 A -
192 A
- 1.1 V
25 - 18.5
1.5
ns nC A
Doc ID 14079 Rev 3
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Electrical characteristics
STD60N3LH5, STP60N3LH5, STU60N3LH5
2.1 Electrical characteris.