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STP60N3LH5 Dataheets PDF



Part Number STP60N3LH5
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STP60N3LH5 DatasheetSTP60N3LH5 Datasheet (PDF)

STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET Features Type STD60N3LH5 STP60N3LH5 STU60N3LH5 VDSS 30 V 30 V 30 V RDS(on) max 0.008 Ω 0.0084 Ω 0.0084 Ω ID 48 A 48 A 48 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications Description This STripFET™V Power MOSFET technology is among.

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STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET Features Type STD60N3LH5 STP60N3LH5 STU60N3LH5 VDSS 30 V 30 V 30 V RDS(on) max 0.008 Ω 0.0084 Ω 0.0084 Ω ID 48 A 48 A 48 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. 3 2 1 TO-220 3 1 DPAK 3 2 1 IPAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes STD60N3LH5 STP60N3LH5 STU60N3LH5 Marking 60N3LH5 60N3LH5 60N3LH5 Package DPAK TO-220 IPAK Packaging Tape and reel Tube Tube April 2009 Doc ID 14079 Rev 3 1/16 www.st.com 16 Contents Contents STD60N3LH5, STP60N3LH5, STU60N3LH5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 Doc ID 14079 Rev 3 STD60N3LH5, STP60N3LH5, STU60N3LH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS=0) VDS Drain-source voltage (VGS = 0) @ TJMAX VGS ID (1) Gate-Source voltage Drain current (continuous) at TC = 25 °C ID IDM (2) Drain current (continuous) at TC = 100 °C Drain current (pulsed) PTOT Total dissipation at TC = 25 °C Derating factor EAS (3) Single pulse avalanche energy Tj Operating junction temperature Tstg Storage temperature 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25 °C, Id = 24 A, Vdd = 12 V Value 30 35 ± 22 48 42.8 192 60 0.4 160 -55 to 175 Table 3. Thermal resistance Symbol Parameter Rthj-case Rthj-amb Tj Thermal resistance junction-case max Thermal resistance junction-case max Maximum lead temperature for soldering purpose Value 2.5 100 275 Unit V V V A A A W W/°C mJ °C Unit °C/W °C/W °C Doc ID 14079 Rev 3 3/16 Electrical characteristics STD60N3LH5, STP60N3LH5, STU60N3LH5 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Static Symbol Parameter V(BR)DSS Drain-source breakdown Voltage IDSS IGSS VGS(th) Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage RDS(on) Static drain-source on resistance Test conditions ID = 250 µA, VGS= 0 VDS = 30 V VDS = 30 V,Tc = 125 °C VGS = ± 22 V VDS= VGS, ID = 250 µA VGS= 10 V, ID= 24 A SMD version VGS= 10 V, ID= 24 A VGS= 5 V, ID= 24 A SMD version VGS= 5 V, ID= 24 A Min. Typ. Max. Unit 30 V 1 µA 10 µA ±100 nA 1 1.8 3V 0.0072 0.008 Ω 0.0076 0.0084 Ω 0.0088 0.011 Ω 0.0092 0.0114 Ω Table 5. Dynamic Symbol Parameter Ciss Coss Crss Qg Qgs Qgd Qgs1 Qgs2 Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Pre Vth gate-to-source charge Post Vth gate-to-source charge RG Gate input resistance Test conditions VDS =25 V, f=1 MHz, VGS=0 VDD=15 V, ID = 48 A VGS =5 V (Figure 14) VDD=15 V, ID = 48 A VGS =5 V (Figure 19) f=1 MHz gate bias Bias= 0 test signal level=20 mV open drain Min. Typ. Max. Unit 1350 pF - 265 - pF 32 pF 8.8 nC - 4.7 - nC 2.2 nC 2.2 nC -- 2.5 nC - 1.1 - Ω 4/16 Doc ID 14079 Rev 3 STD60N3LH5, STP60N3LH5, STU60N3LH5 Electrical characteristics Table 6. Switching on/off (resistive load) Symbol Parameter Test conditions td(on) tr Turn-on delay time Rise time VDD=10 V, ID= 24 A, RG=4.7 Ω, VGS= 10 V (Figure 13 and Figure 18) td(off) tf Turn-off delay time Fall time VDD=10 V, ID= 24 A, RG=4.7 Ω, VGS= 10 V (Figure 13 and Figure 18) Min. Typ. Max. Unit 6 - 33 ns - ns 19 ns -- 4.2 ns Table 7. Source drain diode Symbol Parameter Test conditions ISD ISDM Source-drain current Source-drain current (pulsed)(1) VSD Forward on voltage ISD=24 A, VGS=0 trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=48 A, di/dt =100 A/µs, VDD=20 V, (Figure 15) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Min. Typ. Max. Unit 48 A - 192 A - 1.1 V 25 - 18.5 1.5 ns nC A Doc ID 14079 Rev 3 5/16 Electrical characteristics STD60N3LH5, STP60N3LH5, STU60N3LH5 2.1 Electrical characteris.


STD60N3LH5 STP60N3LH5 STU60N3LH5


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