Bipolar Transistor. 2SC4905 Datasheet

2SC4905 Transistor. Datasheet pdf. Equivalent

2SC4905 Datasheet
Recommendation 2SC4905 Datasheet
Part 2SC4905
Description Silicon NPN Bipolar Transistor
Feature 2SC4905; 2SC4905 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire Features • High gai.
Manufacture Hitachi Semiconductor
Datasheet
Download 2SC4905 Datasheet




Hitachi Semiconductor 2SC4905
2SC4905
Silicon NPN Bipolar Transistor
Application
VHF & UHF wide band amplifire
Features
• High gain bandwidth product
fT = 5.8 GHz typ
• High gain, low noise figure
PG = 12.0 dB typ,
NF = 1.6 dB typ at f = 900 MHz
CMPAK
3
1
2
1. Emitter
2. Base
3. Collector
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Collector to base voltage
VCBO
20
V
———————————————————————————————————————————
Collector to emitter voltage
VCEO
12
V
———————————————————————————————————————————
Emitter to base voltage
VEBO
2
V
———————————————————————————————————————————
Collector current
IC 50 mA
———————————————————————————————————————————
Collector power dissipation
PC
100 mW
———————————————————————————————————————————
Junction temperature Tj 150 °C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————



Hitachi Semiconductor 2SC4905
2SC4905
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
———————————————————————————————————————————
Collector to base
breakdown voltage
V(BR)CBO
20
— V IC = 10 µA, IE = 0
———————————————————————————————————————————
Collector cutoff current
ICBO
— — 10 µA VCB = 15 V,
IE = 0
——————————————————————————————
ICEO
——1
mA VCE = 12 V,
RBE =
———————————————————————————————————————————
Emitter cutoff current
IEBO
— — 10 µA VEB = 2 V,
IC = 0
———————————————————————————————————————————
DC current transfer ratio
hFE
50 120 250
VCE = 5 V,
IC = 20 mA
———————————————————————————————————————————
Output capacitance
Cob — 0.8 1.2 pF VCB = 5 V,
IE = 0, f = 1 MHz
———————————————————————————————————————————
Gain bandwidth
fT 4 5.8 — GHz VCE = 5 V,
product
IC = 20 mA
———————————————————————————————————————————
Power gain
PG 9.5 12.0 — dB VCE = 5 V,
IC = 20 mA,
f = 900 MHz
———————————————————————————————————————————
Noise figure
NF — 1.6 3.0 dB VCE = 5 V,
IC = 5 mA,
f = 900 MHz
———————————————————————————————————————————
Marking for 2SC4905 is “YM–”.



Hitachi Semiconductor 2SC4905
Maximum collector power dissipation curve
200
150
100
50
0 50 100 150 200
Ambient Temperature Ta (°C)
2SC4905
DC current transfer ratio
vs. collector current
200
VCE = 5V
160
120
80
40
0
0.1 0.2 0.5 1 2 5 10 20
Collector Current I C (mA)
50
Gain bandwidth product vs. collector current
10
VCE = 5 V
8
6
4
2
0
12
5 10 20
50
Collector Current I C (mA)
Collector output capacitance
vs. collector to base voltage
1.6
IE =0
f = 1 MHz
1.4
1.2
1.0
0.8
0.6
0.5 1
2
5 10 20
Collector to Base Voltage VCB (V)







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