K664

Silicon MOS FETs (Small Signal) 2SK664 Silicon N-Channel MOS FET For switching s Features q High-speed switching q S-mini type package, allowing downsizing of the sets and auto- matic insertion through the tape/magazine packing. 2.0±0.2 1.3±0.1 0.65 0.65 unit: mm 0.425 2.1±0.1 1.25±0.1 0.425 0.3–+00.1 1 3 2 0.9±0.1 0.7±0.1 0.2 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 150 150 −55 to +150 Unit V V mA mA mW °C °C 0.2±0.1 1: Gate 2: Source 3: Drain EIAJ: SC-70 S-Mini Type Package (3-pin) Marking Symbol: 3N Internal Connection D G 0 to 0.1 0.15–+00..015 s Electrical Characteristics (Ta = 25°C) S Parameter Symbol Conditions min typ max Unit Drain to Source cut-off current IDSS VDS = 10V, VGS = 0 10 µA Gate to Source leakage current IGSS VGS = 8V, VDS = 0 50 µA Drain to Source breakdown voltage VDSS ID = 100µA, VGS = 0 50 V Gate threshold voltage Vth ID = 100µA, VDS = VGS 1.5 3.5 V Drain to Source ON-resistance RDS(on) ID = 20mA, VGS = 5V 50 Ω Forward transfer admittance | Yfs | ID = 20mA, VDS = 5V, f = 1kHz 20 mS Input capacitance (Common Source) Ciss 15 pF Output capacitance (Common Source) Coss VDS = 5V, VGS = 0, f = 1kHz 5 pF Reverse transfer capacitance (Common Source) Crss 1 pF Turn-on time ton* VDD = 5V...