2SK664. K664 Datasheet

K664 2SK664. Datasheet pdf. Equivalent

K664 Datasheet
Recommendation K664 Datasheet
Part K664
Description 2SK664
Feature K664; Silicon MOS FETs (Small Signal) 2SK664 Silicon N-Channel MOS FET For switching s Features q High-spe.
Manufacture Panasonic Semiconductor
Datasheet
Download K664 Datasheet




Panasonic Semiconductor K664
Silicon MOS FETs (Small Signal)
2SK664
Silicon N-Channel MOS FET
For switching
s Features
q High-speed switching
q S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSO
ID
IDP
PD
Tch
Tstg
Ratings
50
8
100
200
150
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
0.2±0.1
1: Gate
2: Source
3: Drain
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 3N
Internal Connection
D
G
s Electrical Characteristics (Ta = 25°C)
S
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current IDSS
VDS = 10V, VGS = 0
10 µA
Gate to Source leakage current IGSS
VGS = 8V, VDS = 0
50 µA
Drain to Source breakdown voltage VDSS
ID = 100µA, VGS = 0
50
V
Gate threshold voltage
Vth ID = 100µA, VDS = VGS
1.5
3.5 V
Drain to Source ON-resistance RDS(on) ID = 20mA, VGS = 5V
50
Forward transfer admittance
| Yfs |
ID = 20mA, VDS = 5V, f = 1kHz
20
mS
Input capacitance (Common Source) Ciss
15 pF
Output capacitance (Common Source) Coss
VDS = 5V, VGS = 0, f = 1kHz
5 pF
Reverse transfer capacitance (Common Source) Crss
1 pF
Turn-on time
ton* VDD = 5V, VGS = 0 to 5V, RL = 200
10
ns
Turn-off time
toff* VDD = 5V, VGS = 5 to 0V, RL = 200
20
ns
* ton, toff measurement circuit
VGS = 5V
50
Vout 200
VDD = 5V
Vin
Vout
10%
90%
10%
90%
ton toff
1



Panasonic Semiconductor K664
Silicon MOS FETs (Small Signal)
PD Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
ID VDS
120
Ta=25˚C
100
VGS=6.0V
5.5V
80
5.0V
60
4.5V
40
4.0V
20 3.5V
3.0V
2.5V
0
0 2 4 6 8 10 12
Drain to source voltage VDS (V)
Ciss, Coss, Crss VDS
12
VGS=0
f=1MHz
Ta=25˚C
10
Ciss
8
6
4
Coss
2
0 Crss
1 3 10 30 100
Drain to source voltage VDS (V)
ID VGS
120
VDS=5V
Ta=25˚C
100
Ta=–25˚C
80
25˚C
60 75˚C
40
20
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
VIN IO
100 VO=5V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Output current IO (mA)
100
2SK664
| Yfs | VGS
60
VDS=5V
Ta=25˚C
50
40
30
20
10
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
RDS(on) VGS
120
ID=20mA
100
80
60
Ta=75˚C
40 25˚C
–25˚C
20
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
2







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