2SC1008

WEITRON NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 2SC1008 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO ICM PCM TJ Tstg Value 80 0.7 0.8 -55 to +150 -55 to +150 Units V A W °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO IEBO hFE VCE(sat) Test conditions IC= 100µA, IE=0 IC= 10mA, IB=0 IE= 10µA, IC=0 VCB= 60V, IE=0 VEB= 5V, IC=0 VCE= 2V, IC= 50mA IC=500mA, IB= 50mA MIN 80 60 8 40 Base-emitter saturation voltage Transition Frequency V BE(sat) fT IC=500mA, IB= 50mA VCE=10V,IC=50mA 30 TYP MAX 0.1 0.1 400 0.4 1.1 Units V V V µA µA V V MHz CLASSIFICATION OF hFE Rank R Range 40-80 O 70-140 Y 120-240 G 200-400 WEITRON hpp://www.weitron.com.tw 1/3 15-Feb-2011 2SC1008 Typical Characteristics WEITRON hpp://www.weitron.com.tw 2/3 15-Feb-2011 H L 2SC1008 TO-92 Outline Dimensions E C J K G unit: mm TO-92 Dim M in A 3.30 B 1.10 C 0.38 D 0.36 E 4.40 G 3.43 H 4.30 Max 3.70 1.40 0.55 0.51 4.70 4.70 J 1.270TYP K 2.44 2.64 L 14.10 14.50 D B A WEITRON http://www.weitron.com.tw 3/3 15-Feb-2011 ...