C3636

Ordering number:EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3636] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Storage Time Fall Time Symbol Conditions ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE tstg tf VCB=500V, IE=0 VCE=900V, RBE=0 IC=100mA, IB=0 VEB=5V, IC=0 IC=4A, IB=0.8A IC=4A, IB=0.8A VCE=5V, IC=0.8A IC=4A, IB1=0.8A, IB2=–1.6A IC=4A, IB1=0.8A, IB2=–1.6A 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Ratings 900 500 7 7 14 80 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 500 8 0.1 max 10 0.5 1 2 1.5 3.0 0.2 Unit µA mA V mA V V µs µs Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life...