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2SK3497
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3497
High Power Amplifier Application
Unit: mm
High breakdown voltage: VDSS = 180V Complementary to 2SJ618
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
180
Gate−source voltage
VGSS
±12
Drain current
D...
