Power MOSFET. IRFSL52N15DPBF Datasheet

IRFSL52N15DPBF MOSFET. Datasheet pdf. Equivalent

IRFSL52N15DPBF Datasheet
Recommendation IRFSL52N15DPBF Datasheet
Part IRFSL52N15DPBF
Description Power MOSFET
Feature IRFSL52N15DPBF; PD - 97002A Applications l High frequency DC-DC converters l Plasma Display Panel Benefits l Low Ga.
Manufacture International Rectifier
Datasheet
Download IRFSL52N15DPBF Datasheet




International Rectifier IRFSL52N15DPBF
PD - 97002A
Applications
l High frequency DC-DC converters
l Plasma Display Panel
Benefits
l Low Gate-to-Drain Charge to
Reduce\ Switching Losses
l Fully Characterized Capacitance
Including Effective COSS to Simplify
Design, (See App. Note AN1001)
l Fully Characterized Avalanche
Voltage and Current
l Lead-Free
IRFB52N15DPbF
IRFS52N15DPbF
IRFSL52N15DPbF
HEXFET® Power MOSFET
Key Parameters
VDS
VDS (Avalanche) min.
RDS(ON) max @ 10V
TJ max
150
200
32
175
V
V
m:
°C
TO-220AB
IRFB52N15DPbF
D2Pak
TO-262
IRFS52N15DPbF IRFSL52N15DPbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V ‡
Continuous Drain Current, VGS @ 10V ‡
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation ‡
Linear Derating Factor ‡
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Thermal Resistance
Max.
51*
36*
240
3.8
230*
1.5*
± 30
5.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface †
Junction-to-Ambient†
Junction-to-Ambient‡
Typ.
–––
0.50
–––
–––
Max.
0.47*
–––
62
40
Units
°C/W
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes  through ‡ are on page 11
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1
09/22/10



International Rectifier IRFSL52N15DPBF
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
150
–––
–––
3.0
–––
–––
––– –––
0.16 –––
––– 32
––– 5.0
––– 25
––– 250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
Units
V
V/°C
m
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 36A „
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
19 ––– –––
––– 60 89
––– 18 27
––– 28 42
––– 16 –––
––– 47 –––
––– 28 –––
––– 25 –––
––– 2770 –––
––– 590 –––
––– 110 –––
––– 3940 –––
––– 260 –––
––– 550 –––
S VDS = 50V, ID = 36A
ID = 36A
nC VDS = 75V
VGS = 10V, „
VDD = 75V
ns ID = 36A
RG = 2.5
VGS = 10V „
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V …
Avalanche Characteristics
Parameter
dhEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
™EAR Repetitive Avalanche Energy
™VDS (Avalanche) Repetitive Avalanche Voltage
Min.
–––
–––
–––
200
Typ.
–––
–––
450
–––
Max.
470
36
–––
–––
Units
mJ
A
mJ
V
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) †
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 60
––– ––– 240
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 36A, VGS = 0V „
––– 140 210 nS TJ = 25°C, IF = 36A
––– 780 1170 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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International Rectifier IRFSL52N15DPBF
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
1000
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
10
1000
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
10
5.0V
1
0.1
0.1
5.0V
300µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1
0.1
0.1
300µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000.00
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
5.0
VDS = 15V
300µs PULSE WIDTH
7.0 9.0 11.0 13.0
VGS, Gate-to-Source Voltage (V)
15.0
Fig 3. Typical Transfer Characteristics
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3.0
I D = 60A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3







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