Transistor
2SB643, 2SB644
Silicon PNP epitaxial planer type
For low-power general amplification Complementary to 2SD638...
Transistor
2SB643, 2SB644
Silicon
PNP epitaxial planer type
For low-power general amplification Complementary to 2SD638 and 2SD639
s Features
q M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to 2SB643 base voltage 2SB644 Collector to 2SB643 emitter voltage 2SB644 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol
VCBO
VCEO
VEBO ICP IC PC Tj Tstg
Ratings –30 –60 –25 –50 –7 –1 – 0.5 600 150
–55 ~ +150
Unit
V
V
V A A mW ˚C ˚C
6.9±0.1 1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1 1.0
1.0 4.5±0.1
4.1±0.2
1.25±0.05 2.4±0.2 2.0±0.2 3.5±0.1
1.0±0.1 0.4 R0.7
0.85 0.55±0.1 321
0.45±0.05
2.5 2.5
1:Base 2:Collector 3:Emitter
EIAJ:SC–71 M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base voltage
2SB643 2SB644
ICBO ICEO
VCBO
Collector to emitter voltage
2SB643 2SB644
VCEO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage Transition frequency Collector output capacitance
VEBO hFE1*1 hFE2 VCE(sat) fT Cob
Conditions VCB = –20V, IE = 0 VCE = –20V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0 VCE = –10V, IC = –150mA*2 VCE = –10V, IC = –500mA*2 IC = –300mA, IB = –30mA*2 VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz
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