2SB643. B643 Datasheet

B643 2SB643. Datasheet pdf. Equivalent

B643 Datasheet
Recommendation B643 Datasheet
Part B643
Description 2SB643
Feature B643; Transistor 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Com.
Manufacture Panasonic Semiconductor
Datasheet
Download B643 Datasheet




Panasonic Semiconductor B643
Transistor
2SB643, 2SB644
Silicon PNP epitaxial planer type
For low-power general amplification
Complementary to 2SD638 and 2SD639
s Features
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SB643
base voltage 2SB644
Collector to 2SB643
emitter voltage 2SB644
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–60
–25
–50
–7
–1
– 0.5
600
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base
voltage
2SB643
2SB644
ICBO
ICEO
VCBO
Collector to emitter
voltage
2SB643
2SB644
VCEO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VEBO
hFE1*1
hFE2
VCE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
VCE = –20V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA*2
VCE = –10V, IC = –500mA*2
IC = –300mA, IB = –30mA*2
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
*1hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
S
170 ~ 340
min typ max Unit
–100 nA
–1 µA
–30
V
–60
–25
V
–50
–7 V
85 340
40 90
– 0.35 – 0.6
V
200 MHz
6 15 pF
*2 Pulse measurement
1



Panasonic Semiconductor B643
Transistor
PC — Ta
800
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
fT — IE
240
VCB=–10V
Ta=25˚C
200
160
120
80
40
0
1 3 10 30 100
Emitter current IE (mA)
–800
–700
–600
–500
–400
–300
–200
IC — VCE
Ta=25˚C
IB=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
–100
0
0 –4 –8 –12 –16 –20
Collector to emitter voltage VCE (V)
2SB643, 2SB644
–800
–700
IC — IB
VCE=–10V
Ta=25˚C
–600
–500
–400
–300
–200
–100
0
0 –2 –4 –6 –8 –10
Base current IB (mA)
–100
–30
–10
VBE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=–25˚C
75˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Cob — VCB
24
IE=0
f=1MHz
Ta=25˚C
20
16
12
8
4
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
hFE — IC
600
VCE=–10V
500
400
300
Ta=75˚C
200 25˚C
–25˚C
100
0
– 0.01 – 0.03 –0.1 – 0.3 –1 –3
Collector current IC (A)
–10
ICEO — Ta
104
VCE=–10V
103
102
10
1
0 40 80 120 160 200
Ambient temperature Ta (˚C)
2







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